铜铟镓硒(CIGS)纳米薄膜作为一种半导体材料,在太阳能电池领域发挥着重要作用。本文基于磁控溅射技术,在不同溅射功率、工作压强和溅射时间下制备了一系列CIGS纳米薄膜样品,并利用激光诱导击穿光谱(LIBS)技术完成了CIGS纳米薄膜中Ga与(In+Ga)原子比以及Cu与(In+Ga)原子比的定量分析;然后结合每个溅射参数下绘制的单一定标曲线,绘制了两个含量比的综合定标曲线,综合定标曲线的拟合系数均达到了0.99以上,说明拟合效果良好。同时,针对三个随机溅射参数下制备的CIGS纳米薄膜样品,对比了能量色散X射线光谱(EDS)技术和LIBS技术的分析结果,两者之间的误差均小于5%,验证了LIBS技术分析的精确性。本研究为CIGS薄膜的快速分析和性能的及时判定提供了一种新手段,也开发了LIBS技术在薄膜半导体材料领域的新应用。

As a semiconductor material, Cu(In,Ga)Se₂ (CIGS) nano film plays an important role in the field of solar cells. In this paper, a series of CIGS thin film samples were deposited using the magnetron sputtering technology under different sputtering powers, working pressures, and sputtering time. Laser-induced breakdown spectroscopy (LIBS) was quantitatively analyze the atomic concentration ratios of Ga to In+Ga and Cu to In+Ga in CIGS thin film samples. Then combined with the single calibration curve drawn under each sputtering parameter, a merged calibration curve of two content ratios was drawn, and the fitting coefficient of the merged calibration curve reached more than 0.99, indicating that the fitting effect is good. Moreover, the three samples of CIGS thin films under random sputtering parameters were used to assess the accuracy of LIBS by comparing the analysis results of energy dispersive X-ray spectroscopy (EDS) and LIBS. The errors of the analytical results were all less than 5%, verifying the accuracy of LIBS. This research provides a new method for the rapid analysis of CIGS thin film and the timely determination of performance and develops new applications of LIBS technology in the field of thin film semiconductor materials.