Based on the wavelength transparency of the Butler matrix (BM) beamforming network, we demonstrate a multi-beam optical phased array (MOPA) with an emitting aperture composed of grating couplers at a 1.55 μm pitch for wavelength-assisted two-dimensional beam-steering. The device is capable of simultaneous multi-beam operation in a field of view (FOV) of 60° × 8° in the phased-array scanning axis and the wavelength-tuning scanning axis, respectively. The typical beam divergence is about 4° on both axes. Using multiple linearly chirped lasers, multi-beam frequency-modulated continuous wave (FMCW) ranging is realized with an average ranging error of 4 cm. A C-shaped target is imaged for proof-of-concept 2D scanning and ranging.

Expanding the optical communication band is one of the most effective methods of overcoming the nonlinear Shannon capacity limit of single fiber. In this study, GeSn resonance cavity enhanced (RCE) photodetectors (PDs) with an active layer Sn component of 9%–10.8% were designed and fabricated on an SOI substrate. The GeSn RCE PDs present a responsivity of 0.49 A/W at 2 μm and a 3-dB bandwidth of approximately 40 GHz at 2 μm. Consequently, Si-based 2 μm band optical communication with a transmission rate of 50 Gbps was demonstrated by using a GeSn RCE detector. This work demonstrates the considerable potential of the Si-based 2 μm band photonics in future high-speed and high-capacity optical communication.

We propose and numerically demonstrate a photonic computing primitive designed for integrated spiking neural networks (SNNs) based on add-drop ring microresonators (ADRMRs) and electrically reconfigurable phase-change material (PCM) photonic switches. In this neuromorphic system, the passive silicon-based ADRMR, equipped with a power-tunable auxiliary light, effectively demonstrates nonlinearity-induced dual neural dynamics encompassing spiking response and synaptic plasticity that can generate single-wavelength optical neural spikes with synaptic weight. By cascading these ADRMRs with different resonant wavelengths, weighted multiple-wavelength spikes can be feasibly output from the ADRMR-based hardware arrays when external wavelength-addressable optical pulses are injected; subsequently, the cumulative power of these weighted output spikes is utilized to ascertain the activation status of the reconfigurable PCM photonic switches. Moreover, the reconfigurable mechanism driving the interconversion of the PCMs between the resonant-bonded crystalline states and the covalent-bonded amorphous states is achieved through precise thermal modulation. Drawing from the thermal properties, an innovative thermodynamic leaky integrate-and-firing (TLIF) neuron system is proposed. With the TLIF neuron system as the fundamental unit, a fully connected SNN is constructed to complete a classic deep learning task: the recognition of handwritten digit patterns. The simulation results reveal that the exemplary SNN can effectively recognize 10 numbers directly in the optical domain by employing the surrogate gradient algorithm. The theoretical verification of our architecture paves a whole new path for integrated photonic SNNs, with the potential to advance the field of neuromorphic photonic systems and enable more efficient spiking information processing.

We report the design, fabrication, and characterization of a universal silicon PN junction ring resonator for C band error-free communication links operated up to 50 Gb/s with co-designed optical modulation and detection performance. The universal p-n junction ring device shows co-designed detection responsivity up to 0.84 A/W, in conjunction with a modulation efficiency of ∼4V·mm and >8dB optical modulation extinction ratio, enabling C band 50 Gb/s NRZ communication link with a bit error rate ≤3×10-12. Individually, the speed of modulation and detection is measured up to 112 Gb/s and 80 Gb/s, respectively. The principle of co-designing the PN junction ring modulator and detector performance required for error-free communication links can significantly ease the fabrication yield challenges of ring structures by reducing the number of types of devices. The principle can also be applied to O band wavelengths. To the best of our knowledge, for the first time, a device of this type has achieved both error-free modulation and detection operation up to 50 Gb/s in the C band individually or in conjugation as an error-free communication link, which paves the way to realize a >1.6Tb/s all-silicon WDM-based error-free optical transceiver link in the future and is essential for future programmable photonics circuits.

On-chip polarization controllers are extremely important for various optical systems. In this paper, a compact and robust silicon-based on-chip polarization controller is proposed and demonstrated by integrating a special polarization converter and phase shifters. The special polarization converter consists of a 1×1 Mach–Zehnder interferometer with two polarization-dependent mode converters at the input/output ends. When light with an arbitrary state of polarization (SOP) is launched into the chip, the TE0 and TM0 modes are simultaneously excited. The polarization extinction ratio (PER) and the phase difference for the TE0/TM0 modes are tuned by controlling the first phase shifter, the polarization converter, and the second phase shifter. As a result, one can reconstruct the light SOP at the output port. The fabricated polarization controller, as compact as ∼150μm×700μm, exhibits an excess loss of less than 1 dB and a record PER range of >54dB for arbitrary input light beams in the wavelength range of 1530–1620 nm.

Silicon-based electro-optic modulators contribute to easing the integration of high-speed and low-power consumption circuits for classical optical communications and data computations. Beyond the plasma dispersion modulation, an alternative solution in silicon is to exploit the DC Kerr effect, which generates an equivalent linear electro-optical effect enabled by applying a large DC electric field. Although some theoretical and experimental studies have shown its existence in silicon, limited contributions relative to plasma dispersion have been achieved in high-speed modulation so far. This paper presents high-speed optical modulation based on the DC Kerr effect in silicon PIN waveguides. The contributions of both plasma dispersion and Kerr effects have been analyzed in different waveguide configurations, and we demonstrated that the Kerr induced modulation is dominant when a high external DC electric field is applied in PIN waveguides. High-speed optical modulation response is analyzed, and eye diagrams up to 80 Gbit/s in NRZ format are obtained under a d.c. voltage of 30 V. This work paves the way to exploit the Kerr effect to generate high-speed Pockels-like optical modulation.

High-performance germanium photodiodes are crucial components in silicon photonic integrated circuits for large-capacity data communication. However, the bandwidths of most germanium photodiodes are limited by the intractable resistance–capacitance parasitic effect. Here, we introduce a unique U-shaped electrode to alleviate this issue, reducing the parasitic effect by 36% without compromising any other performance. Experimentally, a large bandwidth of 103 GHz, an optical responsivity of 0.95 A/W at 1550 nm, and a dark current as low as 1.3 nA are achieved, leading to a record high specific detectivity. This is the first breakthrough to 100 GHz bandwidth among all vertical germanium photodiodes, to the best of our knowledge. Open eye diagrams of 120 Gb/s on-off keying and 200 Gb/s four-level pulse amplitude signals are well received. This work provides a promising solution for chip-based ultra-fast photodetection.

In the same silicon photonic integrated circuit, we compare two types of integrated degenerate photon-pair sources (microring resonators and waveguides) using Hong–Ou–Mandel (HOM) interference experiments. Two nominally identical microring resonators are coupled to two nominally identical waveguides, which form the arms of a Mach–Zehnder interferometer. This is pumped by two lasers at two different wavelengths to generate, by spontaneous four-wave mixing, degenerate photon pairs. In particular, the microring resonators can be thermally tuned in or out of resonance with the pump wavelengths, thus choosing either the microring resonators or the waveguides as photon-pair sources, respectively. In this way, an on-chip HOM visibility of 94% with microring resonators and 99% with straight waveguides is measured upon filtering. We compare our experimental results with theoretical simulations of the joint spectral intensity and the purity of the degenerate photon pairs. We verify that the visibility is connected to the sources’ indistinguishability, which can be quantified by the overlap between the joint spectral amplitudes (JSA) of the photon pairs generated by the two sources. We estimate a JSA overlap of 98% with waveguides and 89% with microring resonators.

This paper presents a novel approach to counterbalance free-carrier-absorption (FCA) in electro-optic (E-O) Mach–Zehnder interferometer (MZI) cells by harnessing the self-heating effect. We show insights on crosstalk limitations in MZIs with direct carrier-injection and provide a detailed design methodology on a differential phase shifter pair. Leveraging both free-carrier dispersion (FCD) and self-heating effects, our design enables arbitrary phase tuning with balanced FCA loss in the pair of arms, eliminating the need for additional phase corrections and creating ultralow crosstalk MZI elements. This neat design disengages from the commonly used nested structure, thus providing an opportunity of embedding tunable couplers for correcting imperfect splitting ratios given that only two are needed. We show that with the use of tunable directional couplers, a standard ±10nm process variation is tolerated, while achieving a crosstalk ratio below -40dB. By direct carrier injection in both arms, the proposed device operates at nanosecond scales and can bring about a breakthrough in the scalability of E-O switch fabrics, as well as other silicon integrated circuits that have stringent requirements for crosstalk leakage.

The development of an efficient group-IV light source that is compatible with the CMOS process remains a significant goal in Si-based photonics. Recently, the GeSn alloy has been identified as a promising candidate for realizing Si-based light sources. However, previous research suffered from a small wafer size, limiting the throughput and yield. To overcome this challenge, we report the successful growth of GeSn/Ge multiple-quantum-well (MQW) p-i-n LEDs on a 12-inch (300-mm) Si substrate. To the best of our knowledge, this represents the first report of semiconductor LEDs grown on such a large substrate. The MQW LED epitaxial layer is deposited on a 12-inch (300-mm) (001)-oriented intrinsic Si substrate using commercial reduced pressure chemical vapor deposition. To mitigate the detrimental effects of threading dislocation densities on luminescence, the GeSn/Ge is grown pseudomorphically. Owing to the high crystal quality and more directness in the bandgap, enhanced electroluminescence (EL) integrated intensity of 27.58 times is demonstrated compared to the Ge LED. The MQW LEDs exhibit EL emission near 2 μm over a wide operating temperature range of 300 to 450 K, indicating high-temperature stability. This work shows that GeSn/Ge MQW emitters are potential group-IV light sources for large-scale manufacturing.