STI埋层的高光电流和低暗计数率单光子雪崩二极管

研究和分析了一种0.18 μm CMOS工艺单光子雪崩二极管(SPAD), 其结构能抑制过早的边缘击穿(PEB), 同时获得较大的光电流和低的暗计数率(DCR).该SPAD由p-well/deep n-well的感光结, deep n-well向上扩散形成的区域和边缘Shallow Trench Isolation(STI)共同形成的保护环组成.通过测试确定了与光电流和暗率有关的STI层的大小.结果证明, 在STI层与保护环之间的重叠区域为1 μm 时, SPAD的暗计数率和光电流最佳.此外, 直径为10 μm的圆形SPAD器件的暗计数率为208 Hz, 且在波长为510 nm时峰值光子探测概率为20.8%, 此时具有低的暗计数率和高的探测效率以及宽的光谱响应特性.

Abstract

A 0.18 μm CMOS process single photon avalanche diode (SPAD) was examined in this study in an effort to inhibit premature edge breakdown (PEB) and secure large photocurrent and low dark count rate (DCR). The SPAD consists of a p-well/deep n-well photosensitive junction and a guard ring as-formed by a deep n-well up-diffused region and an edge STI. The size of the STI layer related to the light current and dark rate was determined via test. The results indicate that the photocurrent and dark count of the SPAD are optimal when the overlapping length between the STI and guard ring is 1 μm at room temperature. The SPAD with 10 μm diameter has high photon detection probability (PDP), wide spectral response, dark count rate as low as 208 Hz, and 20.8% peak PDP when the wavelength is 510 nm. A 0.18 μm CMOS process single photon avalanche diode (SPAD) was examined in this study to inhibit premature edge breakdown (PEB) and secure large photocurrent and low dark count rate (DCR). The SPAD consists of a p-well/deep n-well photosensitive junction and a guard ring as-formed by a deep n-well up-diffused region and an edge STI. The size of the STI layer related to the light current and dark rate was determined via test. The results indicate that the photocurrent and dark count of the SPAD are optimal when the overlapping length between the STI and guard ring is 1 μm at room temperature. The SPAD with 10 μm diameter has high photon detection probability (PDP), wide spectral response, dark count rate as low as 208 Hz, and 208% peak PDP when the wavelength is 510 nm.

参考文献

[1] Pal M, Foody G M. Feature selection for classification of hyperspectral data by SVM［J］. IEEE Transactions on Geoscience and Remote Sens-ing, 2010, 48(5): 2297-2307.

[2] Soper S A, Flanagan J H, Legendre B L, et al. Near-infrared, laser-induced fluorescence detection for DNA sequencing applications ［J］. IEEE Journal of Selected Topics in Quantum Electronics , 1996, 2(4):1129-1139.

[3] Nightingale N S. A new silicon avalanche photodiode photo counting detector module for astronomy ［J］. Experimental Astronomy. 1990,1(6):407-422.

[4] Richardson J, Walker R, Grant L, et al. A 32 × 3250 ps resolution 10 bit time to digital converter array in 130 nm CMOS for time correlated imaging［J］. In Proc. IEEE Conf. Custom Integr. Circuits, New York, 2009:77-80.

[5] Niclass C, Favi C, Kluter T, et al. A 128 × 128 single-photon image sensor with column-level l0-bit time todigital converter array［J］. IEEE J. Solid-State Circuits, 2008, 43(12):2977-2989.

[6] Niclass C, Favi C, Kluter T, et al. Single-photon synchronous detection［J］. IEEE J. Solid-State Circuits, 2009, 44(77):1977-1989.

[7] Carrara L, Niclass C, Scheidegger N, et al. A gamma, X-ray and high energy proton radiation-tolerant CMOS image sensor for space applications［C］. In Proc. IEEE Intl. Solid-State Circuits Conf.-Dig. Tech. Papers , Feb. 2009:40-41.

[8] Guerrieri F, Tisa S, Tosi A, et al. Single-photon camera for high-sensitivity high-speed applications［J］. Proc. SPIE, 2010, 7536:753605.

[9] Finkelstein H, Hsu M J, Esener S C. STI-bounded single-photon avalanche diode in a deep-submicrometer CMOS technology ［J］. IEEE Electron Device Letters, 2006, 27(11):887-889.

[10] Gersbach M, Niclass C, Charbon E, et al. A single photon detector implemented in a 130 nm CMOS imaging process ［C］. Solid-State Device Research Conference, IEEE, Essderc, European. 2008:270-273.

[11] Richardson J A, Grant L A, Henderson R K. Low dark count single-photon avalanche diode structure compatible with standard nanometer scale CMOS technology ［J］. IEEE Photonics Technology Letters, 2009, 21(14):1020-1022.

[12] Richardson J A, Grant L A, Webster E A G, et al. A 2μm diameter, 9Hz dark count, single photon avalanche diode in 130 nm CMOS technology ［C］. Proceeding of European Solid State Device Research Conference, IEEE. 2010:257-260.

[13] Richardson J A, Webster E A G, Grant L A, et al. Scaleable single photon avalanche diode structures in nanometer CMOS technology ［J］. IEEE Transαctions on Electron Devices. 2011, 58(7): 2028-2035.

[14] YANG Jia, JIN Xiang-Liang, YANG Hong-Jiao, et al. Design and analysis of a novel low dark count rate SPAD ［J］. Journal of Infrared and Millimeter Waves (杨佳, 金湘亮, 杨红姣, 等. 一种新型低暗计数率单光子雪崩二极管的设计与分析. 红外与毫米波学报) 2016, 35(4): 394-397.

[15] Malass I, Uhring W, Normand J P L, et al. A single photon avalanche detector in a 180 nm standard CMOS technology ［C］. New Circuits and Systems Conference. IEEE, 2015:1-4.

金湘亮, 彭亚男, 曾朵朵, 杨红姣, 蒲华燕, 彭艳, 罗均. STI埋层的高光电流和低暗计数率单光子雪崩二极管[J]. 红外与毫米波学报, 2019, 38(2): 02149. JIN Xiang-Liang, PENG Ya-Nan, ZENG Duo-Duo, YANG Hong-Jiao, PU Hua-Yan, PENG Yan, LUO Jun. STI-bounded single-photon avalanche diode with high photo current and low dark rate[J]. Journal of Infrared and Millimeter Waves, 2019, 38(2): 02149.

STI埋层的高光电流和低暗计数率单光子雪崩二极管

关于本站 Cookie 的使用提示

全站搜索

STI埋层的高光电流和低暗计数率单光子雪崩二极管

相关论文

相关资讯

关于本站 Cookie 的使用提示

全站搜索