Photonics Research, 2019, 7 (8): 08000B48, Published Online: Jul. 12, 2019 Copy Citation Text  Follow This Article

Figures & Tables

Fig. 1. (a) Schematic diagram of Mg ion implantation in GaN. (b) SIMS results of Mg distribution in the GaN layer before and after annealing. (c) 2θ-ω XRD scan on (0002) and (1012) planes of as-grown GaN and Mg-implanted GaN with the post-annealing process; the inset shows the AFM morphology of GaN with Mg implantation and the post-annealing process.

下载图片 查看原文

Fig. 2. (a) Current-voltage (I-V) characteristics of the fabricated quasi-vertical GaN p-i-n diode with a Mg implanted p-type layer; the inset illustrates the cross-sectional schematic of the diode. (b) I-V results in linear plots. (c) Electroluminescence (EL) spectrum of the Mg ion-implanted GaN p-i-n diode; the inset displays the EL emission pattern.

下载图片 查看原文

Fig. 3. (a) Photo- and dark current measurements for the Mg ion-implanted quasi-vertical GaN p-i-n photodiode. (b) Spectral response characteristics at zero bias of the UV photodetector based on the Mg ion-implanted p-i-n diode (blue) and a commercially available GaN p-n photodiode (red).

下载图片 查看原文

Fig. 4. (a) Temperature-dependent leakage measurement. (b) Hopping conducting-based linear fitting between ln(J) versus E. (c) Linear fitting between α and 1/T5/4. (d) Poole–Frenkel emission-based linear fitting between ln(J) and E1/2.

下载图片 查看原文

Fig. 5. (a) Reverse-bias-dependent responsivity measurement at an optical power density of 2.5  mW/cm2 at 365 nm. (b) Dependence of photocurrent on the optical power density. (c) Schematic diagram of the electric-field-assisted photocarrier hopping.

下载图片 查看原文

Fig. 6. Time response characteristics of the Mg ion-implantation-based GaN p-i-n diode. (a) Response waveform in six repeated circles. Photocurrent (b) rise and (c) decay edge within one response pulse. (d) Decay waveform in exponential scale.

下载图片 查看原文

Weizong Xu, Yating Shi, Fangfang Ren, Dong Zhou, Linlin Su, Qing Liu, Liang Cheng, Jiandong Ye, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu. Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection[J]. Photonics Research, 2019, 7(8): 08000B48.