Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO<sub>4</sub>

SHEN Gao; LI Zuo-han; HAN Ming

doi:doi:10.1007/s11801-016-6191-2

光电子快报（英文版）, 2016, 12 (6): 430, Published Online: Oct. 12, 2017

Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO₄

SHEN Gao ^1,*LI Zuo-han ²HAN Ming ²

Author Affiliations

¹ Center for Medical Device Evaluation, China Food and Drug Administration, Beijing 100044, China

² Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Laser, School of Science, Beijing Jiaotong University, Beijing 100044, China

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SHEN Gao, LI Zuo-han, HAN Ming. Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO₄[J]. 光电子快报（英文版）, 2016, 12(6): 430.

Cited By

1、 Research progress of solid-state self-Raman yellow lasersLaser Technology, 2018, 42 (5): 673

SHEN Gao, LI Zuo-han, HAN Ming. Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO₄[J]. 光电子快报（英文版）, 2016, 12(6): 430.

Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO₄

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Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO₄