Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO<sub>4</sub>

SHEN Gao; LI Zuo-han; HAN Ming

doi:doi:10.1007/s11801-016-6191-2

光电子快报（英文版）, 2016, 12 (6): 430, Published Online: Oct. 12, 2017

Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO₄

论文大纲

SHEN Gao ^1,*LI Zuo-han ²HAN Ming ²

Author Affiliations

¹ Center for Medical Device Evaluation, China Food and Drug Administration, Beijing 100044, China

² Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Laser, School of Science, Beijing Jiaotong University, Beijing 100044, China

Abstract

Combining the self-stimulated Raman scattering technology and saturable absorber of Cr⁴⁺:YAG, a 1.17 μm c-cut Nd:GdVO₄picosecond Q-switched laser is demonstrated in this paper. With an incident pump power of 10 W, the Q-switched laser with average power of 430 mW for 1.17 μm, pulse width of 270 ps, repetition rate of 13 kHz and the first order Stokes conversion efficiency of 4.3% is obtained. The Q-switched pulse width can be the narrowest in our research. In addition, the yellow laser at 0.58 μm is also achieved by using the LiB3O5 frequency doubling crystal.

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SHEN Gao, LI Zuo-han, HAN Ming. Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO₄[J]. 光电子快报（英文版）, 2016, 12(6): 430.

Fabrication of narrow pulse passively Q-switched selfstimulated Raman laser with c-cut Nd:GdVO₄

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