强激光与粒子束, 2010, 22 (12): 2945, 网络出版: 2011-01-05
碳化硅纳米线的电子发射特性
Intense electron emission of SiC nanowires cathode used in high power microwave
高功率微波 阴极材料 碳化硅纳米线 电子发射 high power microwave cathode materials silicon carbide nanowires electron emission
摘要
以聚碳硅烷为原料,通过1 200 ℃高温裂解工艺制备了碳化硅纳米线,并采用碳化硅纳米线作为高功率微波源用阴极材料, 进行了电子发射实验。结果表明:与天鹅绒阴极材料相比, 碳化硅纳米线具有更高的电子发射电流密度,在115 kV外加激励脉冲高压下,电子发射密度为23.7 kA/cm2,而天鹅绒材料为14.0 kA/cm2, 并具有更好的电子发射品质及更长的使用寿命。因此碳化硅纳米线作为高功率微波源用阴极,具有很好的应用潜力。
Abstract
Experimental study on the electron emission of silicon carbide nanowires cathode samples fabricated by the pyrolysis of polycarbosilane at 1 200 ℃ was carried out. The results show that the silicon carbide nanowires cathode has higher electron emission current density, which is 23.7 kA/cm2 at the condition of 115 kV stimulation voltage and 10 mm distance between the cathode and anode, compared to 14.0 kA/cm2 for the velvet cathode. Also, it emits electron beams of better quality and has longer service life.
陈忠道, 白书欣, 李公义, 李效东, 万红. 碳化硅纳米线的电子发射特性[J]. 强激光与粒子束, 2010, 22(12): 2945. Chen Zhongdao, Bai Shuxin, Li Gongyi, Li Xiaodong, Wan Hong. Intense electron emission of SiC nanowires cathode used in high power microwave[J]. High Power Laser and Particle Beams, 2010, 22(12): 2945.