发光学报, 2019, 40 (7): 842, 网络出版: 2019-07-31   

YAG∶Ce3+荧光粉复合Eu3+掺杂荧光玻璃的激光照明器件

Laser Lighting Device Based on YAG∶Ce3+ Phosphor Composite Eu3+ Doped Phosphor-in-glasses
作者单位
1 上海应用技术大学 理学院, 上海 201418
2 上海应用技术大学 材料科学与工程学院, 上海 201418
3 有研半导体材料有限公司, 北京 100088
4 深圳市晶台股份有限公司, 广东 深圳 518105
5 浙江美科电器有限公司, 浙江 绍兴 312000
摘要
采用结晶法和低温共烧结法制备了Eu3+掺杂的Y3Al5O12∶Ce3+荧光玻璃, 对制备出的样品进行能量色散X射线谱和光致发光光谱测试, 表明稀土离子Eu3+与YAG∶Ce3+荧光粉已掺入荧光玻璃。掺杂不同含量Eu2O3的YAG∶Ce3+荧光玻璃封装成的激光照明器件在驱动电流100 mA下, 经过STC-4000快速光谱仪和PMS-80可见光谱分析系统测试, 掺杂质量分数1% YAG∶Ce3+复合质量分数9% 的Eu3+的荧光玻璃封装的激光照明器件发光效率为267.1 lm/W。激光照明器件随着电流的增加, 其显色指数逐渐增大, 但增加幅度较小。
Abstract
The Eu3+ doped Y3Al5O12∶Ce3+ phosphor-in-glasses(PIGs) was prepared by crystallization and low temperature co-sintering. The prepared samples were tested by energy dispersive X-ray and photoluminescence spectroscopy, indicating that the rare earth ions Eu3+ and YAG∶Ce3+ phosphors have been incorporated into the PIG. YAG∶Ce3+ PIG with different content of Eu2O3 is packaged in a laser illumination device with a driving current of 100 mA. It is tested by STC-4000 fast spectrometer and PMS-80 visible spectrum analysis system, doping mass fraction 1% YAG∶Ce3+ composite mass fraction 9% Eu3+ phosphor-in-glasses encapsulated laser lighting device luminous efficacy is 267.1 lm/W. As the current of laser illumination devices increases, the color rendering index increases gradually, but the increase is small.
参考文献

[1] TSAO J Y. Solid-state lighting:lamps,chips,and materials for tomorrow [J]. IEEE Circuits Devices Mag., 2004,20(3):28-37.

[2] 史光国. 半导体发光二级管及固体照明 [M]. 北京:科学出版社, 2007.

    SHI G G. Semiconductor Light-emitting Diodes and Solid-state Lighting [M]. Beijing:Science Press, 2007. (in Chinese)

[3] STEIGERWALD D A,BHAT J C,COLLINS D,et al.. Illumination with solid state lighting technology [J]. IEEE J. Sel. Top. Quantum Electron., 2002,8(2):310-320.

[4] 徐时清,金尚忠,王宝玲,等. 固体照明光源-白光LED的研究进展 [J]. 中国计量学院学报, 2006,17(3):188-191.

    XU S Q,JIN S Z,WANG B L,et al.. Solid state lighting-recent progress in research of white light emitting diodes [J]. J. China Jiliang Univ., 2006,17(3):188-191. (in Chinese)

[5] 肖芬. 紫外激发白光LED荧光粉的制备及发光特性研究 [D]. 广州:华南理工大学, 2011.

    XIAO F. Preparation and Luminescence Properties of Phosphors for UV Excited White Light-emitting Diodes [D]. Guangzhou:South China University of Technology, 2011. (in Chinese)

[6] 陶岳彬. GaN基大功率蓝光LED的MOCVD生长和改善效率骤降特性的研究 [D]. 北京:北京大学, 2011.

    TAO Y B. Research on MOCVD Growth and Improvement Efficiency Drop Characteristics of GaN-based High Power Blue LEDs [D]. Beijing:Peking University, 2011. (in Chinese)

[7] KOECHNER W. Solid-state Laser Engineering [M]. New York:Springer, 2006.

[8] RAZUM N J. Laser physics [J]. Facial Plast. Surg., 1989,6(3):137-143.

[9] THOMAS G,ISAACS R. Basic principles of lasers [J]. Anaesth. Intensive Care Med., 2011,12(12):574-577.

[10] HERREROS D N,FANG X. Laser ignition of elastomer-modified cast double-base (EMCDB) propellant using a diode laser [J]. Opt. Laser Technol., 2017,89:21-26.

[11] SELIMIS A,MIRONOV V,FARSARI M. Direct laser writing:principles and materials for Scaffold 3D printing [J]. Microelectron. Eng., 2015,132:83-89.

[12] RODRIGUES G C,DUFLOU J R. Opportunities in laser cutting with direct diode laser configurations [J]. CIRP Ann., 2017,66(1):245-248.

[13] ABSTEN G T. Physics of light and lasers [J]. Obstet. Gynecol. Clin. North Am., 1991,18(3):407-427.

[14] LIU H,SUN C L,WANG W S,et al.. Design of a LCOS laser projector [J]. Optik, 2015,126(15-16):1483-1486.

[15] NARUKAWA Y,NAGAHAMA S I,TAMAKI H,et al.. Development of high-luminance white light source using GaN-based light emitting devices [J]. 應用物理, 2005,74(11):1423-1432.

[16] KOZAKI T,NAGAHAMA S,MUKAI T. Recent progress of high-power GaN-based laser diodes [C]. Proceedings Volume 6485,Novel In-plane Semiconductor Lasers VI,San Jose,California,USA, 2007,6485:648503.

[17] DENAULT K A,CANTORE M,NAKAMURA S,et al.. Efficient and stable laser-driven white lighting [J]. AIP Adv., 2013,3(7):072107-1-7.

[18] WIERERJR J J,TSAO J Y,SIZOV D S. The potential of Ⅲ-nitride laser diodes for solid-state lighting [J]. Phys. Status Solidi C, 2014,11(3-4):674-677.

[19] 许礼强. 基于激光远程激发荧光粉(LARP)技术的新型白光光源研究 [D]. 深圳:深圳大学, 2015.

    XU L Q. Study on New White Light Source base on LARP Technology [D]. Shenzhen:Shenzhen University, 2015. (in Chinese)

[20] 王子明,黄笑彤,杨波波,等. 低温共烧结制备Lu2.94-xYxAl5O12∶0.06Ce荧光玻璃的研究 [J]. 光电技术应用, 2017,32(6):39-43.

    WANG Z M,HUANG X T,YANG B B,et al.. Preparation of Lu2.94-xYxAl5O12∶0.06Ce phosphor in glass by low-temperature co-sintering method [J]. Electro-Opt. Technol. Appl., 2017,32(6):39-43. (in Chinese)

[21] KINOSHITA J,IKEDA Y,TAKEDA Y,et al.. Suppressed speckle contrast of blue light emission out of white lamp with phosphors excited by blue laser diodes for high-brightness lighting applications [J]. Opt. Rev., 2012,19(6):427-431.

[22] 武传雷. YAG荧光粉的制备和性能研究 [D]. 上海:上海师范大学, 2013.

    WU C L. Preparation and Properties of YAG Phosphors [D]. Shanghai:Shanghai Normal University, 2013. (in Chinese)

郑飞, 茅云蔚, 杨波波, 邹军, 刘祎明, 谢宇, 汤子睿, 库黎明, 邵鹏睿, 陈狄杰. YAG∶Ce3+荧光粉复合Eu3+掺杂荧光玻璃的激光照明器件[J]. 发光学报, 2019, 40(7): 842. ZHENG Fei, MAO Yun-wei, YANG Bo-bo, ZOU Jun, LIU Yi-ming, XIE Yu, TANG Zi-rui, KU Li-ming, SHAO Peng-rui, CHEN Di-jie. Laser Lighting Device Based on YAG∶Ce3+ Phosphor Composite Eu3+ Doped Phosphor-in-glasses[J]. Chinese Journal of Luminescence, 2019, 40(7): 842.

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