光学学报, 1990, 10 (3): 206, 网络出版: 2007-11-12
InGaAsP-InP大光腔结构激光器
High-To InGaAsP semiconductor laser with large optical cavity
摘要
本文针对影响InGaAsP-InP激光器温度特性的各种因素,设计并制备了大光腔(LOC)结构激光器.实验表明,这种结构改善了激光器的温度稳定性,获得了低阈值(宽接触型器件J(th)≈2.5kA/cm~2),高功率(脉冲输出3W)和高特征温度(To=150K)器件.
Abstract
A laser with the large optical cavity (LOC) configuration has beed designed and fabricated taking account of the various factors which have an effect on temperature characteristics of the InGaAsP-InP lasers. The experiments show that such a configuration imporves temperature stability of the laser. The devices with lower threshold current (Jth=2.5KA/cm2 for the broad-area contacts), high power (3W in pulsed operation). and high T0 (150K) have been obtained.
参考文献
钟景昌, 朱宝仁, 黎荣晖. InGaAsP-InP大光腔结构激光器[J]. 光学学报, 1990, 10(3): 206. 钟景昌, 朱宝仁, 黎荣晖. High-To InGaAsP semiconductor laser with large optical cavity[J]. Acta Optica Sinica, 1990, 10(3): 206.
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