基于60 nm T型栅fT & fmax为170 & 210 GHz 的InAlN/GaN HFETs 器件
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吕元杰, 冯志红, 张志荣, 宋旭波, 谭鑫, 郭红雨, 尹甲运, 房玉龙, 蔡树军. 基于60 nm T型栅fT & fmax为170 & 210 GHz 的InAlN/GaN HFETs 器件[J]. 红外与毫米波学报, 2016, 35(6): 641. LV Yuan-Jie, FENG Zhi-Hong, ZHANG Zhi-Rong, SONG Xu-Bo, TAN Xin, GUO Hong-Yu, YIN Jia-Yun, FANG Yu-Long, CAI Shu-Jun. 60 nm T-shaped-gate InAlN/GaN HFETs with fT & fmax of 170 & 210 GHz[J]. Journal of Infrared and Millimeter Waves, 2016, 35(6): 641.