CdS纳米颗粒填充的自支撑多孔硅光致发光特性

为了研究CdS纳米颗粒填充的自支撑多孔硅的光致发光特性, 选用电阻率为0.01~0.02Ω·cm的P型硅片, 先采用二步阳极氧化法制备自支撑多孔硅, 再利用电泳法将CdS纳米颗粒填充入该自支撑多孔硅中.采用扫描电子显微镜、X射线能谱分析、X射线衍射分析、光致发光谱分析对所制备样品的形貌、相结构、组份及发光性能进行研究.实验结果表明：自支撑多孔硅内部成功填充了CdS纳米颗粒, 该CdS纳米颗粒衍射峰为(210); CdS纳米颗粒填充的自支撑多孔硅光致发光峰峰位发生红移, 且从570 nm转移到740 nm; 电泳时间直接影响CdS纳米颗粒的填充量, 导致相关的发光峰强度及发光峰位明显不同.

Abstract

In order to study the photoluminescence properties of freestanding porous silicon filled with CdS nanopaticles, a freestanding porous silicon was prepared by using a p-type silicon wafer with a resistivity of 0.01~0.02Ω·cm by two step anodic oxidation method as the first step, and then CdS nanoparticles were filled into the freestanding porous silicon by the electrophoresis method. The morphology, phase structure, composition and luminescence properties of the prepared samples were characterized by scanning electron microscopy, X-ray energy spectrum analysis, X-ray diffraction analysis and photoluminescence analysis. The results show that, the CdS nanoparticles are successfully filled into the freestanding porous silicon, and CdS nanoparticles present (210) diffraction peaks. The luminescence peak of CdS nanoparticles filled freestanding porous silicon is find red-shifted from 570 nm to 740 nm. The electrophoresis time directly affects the filling amount of CdS nanoparticles, resulting in the changes of the peak intensity and the peak position.

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