Simulation study on the active layer thickness and the interface of a-IGZO-TFT with double active layers
[1] Liu P T, Chou Y T, Teng L F, Li F H, Fuh C S, Shieh H P D. Ambient stability enhancement of thin-film transistor with InGaZnO capped with InGaZnO:N bilayer stack channel layers. IEEE Electron Device Letters, 2011, 32(10): 1397–1399
[2] Marrs M A, Moyer C D, Bawolek E J, Cordova R J, Trujillo J, Raupp G B, Vogt B D. Control of threshold voltage and saturation mobility using dual-active-layer device based on amorphous mixed metal–oxide–semiconductor on flexible plastic substrates. IEEE Transactions on Electron Devices, 2011, 58(10): 3428–3434
[3] Kim S I, Kim C J. High performance oxide thin film transistors with double active layers. In: Proceedings of IEEE International Electron Devices Meeting, 2008
[4] Kim S I, Park J S, Kim C J, Park J C, Song I, Park Y S. High reliable and manufacturable gallium indium zinc oxide thin-film transistors using the double layers as an active layer. In: Journal of the Electrochemical Society, 2009, 156(3): H184–H187
[5] MaengWJ, Park J S, Kim H S, Lee K H, Park K B, Son K S, Kim T S, Kim E S, Ham Y N, Ryu M, Lee S Y. Photo and thermal stability enhancement of amorphous Hf-In-Zn-O thin-film transistors by the modulation of back channel composition. Applied Physics Letters, 2011, 98(7): 073503
[6] Kim C E, Moon P. Density-of-states modeling of solution-processed InGaZnO thin-film transistors. IEEE Electron Device Letters, 2010, 31(10): 1131–1133
[7] Kim Y, Bae M, Kim W, Kong D, Jung H K, Kim H, Kim S, Kim D M, Kim D H. Amorphous InGaZnO thin-film transistors—part I: complete extraction of density of states over the full subband-gap energy range. IEEE Transactions on Electron Devices, 2012, 59(10): 2689–2698
[8] Fung T C, Chuang C S, Chen C, Abe K, Cottle R, Townsend M, Kumomi H, Kanicki J. Two-dimensional numerical simulation of radio frequency sputter amorphous In-Ga-Zn-O thin-film transistors. Journal of Applied Physics, 2009, 106(8): 084511
[9] Bae H, Choi H, Oh S, Kim D H, Bae J, Kim J, Kim Y H, Kim D M. Extraction technique for intrinsic subgap DOS in a-IGZO TFTs by de-embedding the parasitic capacitance through the photonic C–V measurement. IEEE Electron Device Letters, 2013, 34(1): 57–59
[10] Bae M, Lee K M, Cho E S, Kwon H I, Kim D M, Kim D H. Analytical current and capacitance models for amorphous indiumgallium- zinc-oxide thin-film transistors. IEEE Transactions on Electron Devices, 2013, 60(10): 3465–3473
[11] Kim Y, Kim S, Kim W, Bae M, Jeong H K, Kong D, Choi S, Kim D M, Kim D H. Amorphous InGaZnO thin-film transistors—part II: modeling and simulation of negative bias illumination stressinduced instability. IEEE Transactions on Electron Devices, 2012, 59(10): 2699–2706
[12] Bae M, Kim Y, Kong D, Jeong H K, Kim W, Kim J, Hur I, Kim D M, Kim D H. Analytical models for drain current and gate capacitance in amorphous InGaZnO thin-film transistors with effective carrier density. IEEE Electron Device Letters, 2011, 32 (11): 1546–1548
[13] Kim H S, Park J S, Jeong H K, Son K S, Kim T S, Seon J B, Lee E, Chung J G, Kim D H, Ryu M, Lee S Y. Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability. Applied Materials Interfaces, 2012, 4(10): 5416–5421
[14] Oldham W G, Milnes A G. Interface states in abrupt semiconductor heterojunctions. Solid-State Electronics, 1964, 7(2): 153–165
Xiaoyue LI, Sheng YIN, Dong XU. Simulation study on the active layer thickness and the interface of a-IGZO-TFT with double active layers[J]. Frontiers of Optoelectronics, 2015, 8(4): 445. Xiaoyue LI, Sheng YIN, Dong XU. Simulation study on the active layer thickness and the interface of a-IGZO-TFT with double active layers[J]. Frontiers of Optoelectronics, 2015, 8(4): 445.