光学学报, 2020, 40 (8): 0814001, 网络出版: 2020-04-13
封装对大功率VCSEL窄脉冲发光特性的影响 
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Effect of Package on Luminescence Characteristics of High-Power VCSEL with Narrow Pulse
图 & 表
图 3. TO封装VCSEL实物图。(a)侧面图;(b)俯视图
Fig. 3. Photograph of VCSEL with TO package. (a) Side view; (b) top view
图 4. TO封装VCSEL。(a)结构示意图;(b)等效电路图
Fig. 4. VCSEL with TO package. (a) Diagram of configuration; (b) equivalent circuit
图 6. PCB简化示意图。(a)俯视图;(b)仰视图;(c)侧视图
Fig. 6. Simplified diagram of PCB. (a) Top view; (b) bottom view; (c) side view
图 7. Ls不同取值下VCSEL两端电压和电流仿真波形图(C=10 nF, V=90 V)
Fig. 7. Voltage and current simulation waveforms at both ends of VCSEL with different Ls (C=10 nF, V=90 V)
图 8. Rs不同取值下VCSEL两端电压和电流仿真波形图(C=10 nF, V=90 V)
Fig. 8. Voltage and current simulation waveforms at both ends of VCSEL with different Rs (C=10 nF, V=90 V)
图 9. VCSEL两端电压与电流脉冲波形图 (C=10 nF, V=90 V)。(a) TO封装VCSEL; (b) 裸芯片VCSEL
Fig. 9. Pulse waveforms of voltage and current at both ends of VCSEL (C=10 nF, V=90 V). (a) VCSEL with TO package; (b) VCSEL with bare chip
图 10. TO封装VCSEL与裸芯片VCSEL的光脉冲波形图(C=10 nF, V=90 V)
Fig. 10. Optical pulse waveforms of VCSEL with TO package and VCSEL with bare chip (C=10 nF, V=90 V)
图 11. TO封装VCSEL和裸芯片VCSEL的峰值电流与峰值电压关系图
Fig. 11. Relationship between peak current and peak voltage for VCSEL with TO package and VCSEL with bare chip
图 12. 仿真与实验波形对比。(a) TO封装VCSEL; (b) 裸芯片VCSEL
Fig. 12. Comparison of simulated and experimental waveform. (a) VCSEL with TO package; (b) VCSEL with bare chip
图 13. TO封装VCSE与裸芯片VCSEL的光脉冲峰值功率与峰值电流关系(C=10 nF, V=30~90 V)
Fig. 13. Relationship between peak power of optical pulse and peak current of VCSEL with TO package and VCSEL with bare chip (C=10 nF, V=30--90 V)
颜颖颖, 陈志文, 邱剑, 刘克富, 张建伟. 封装对大功率VCSEL窄脉冲发光特性的影响[J]. 光学学报, 2020, 40(8): 0814001. Yingying Yan, Zhiwen Chen, Jian Qiu, Kefu Liu, Jianwei Zhang. Effect of Package on Luminescence Characteristics of High-Power VCSEL with Narrow Pulse[J]. Acta Optica Sinica, 2020, 40(8): 0814001.
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