太赫兹科学与电子信息学报, 2015, 13 (4): 544, 网络出版: 2016-01-26  

平面肖特基二极管的制作

Fabrication of planar Schottky barrier diode
作者单位
中国工程物理研究院激光聚变研究中心,四川绵阳 621999
引用该论文

罗跃川, 赵妍, 沈昌乐, 阎大伟. 平面肖特基二极管的制作[J]. 太赫兹科学与电子信息学报, 2015, 13(4): 544.

LUO Yuechuan, ZHAO Yan, SHEN Changle, YAN Dawei. Fabrication of planar Schottky barrier diode[J]. Journal of terahertz science and electronic information technology, 2015, 13(4): 544.

参考文献

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[2] Bishop W L,Mckinney K,Mattauch R J,et al. A novel whiskerless Schottky diode for millimeter and submillimeter wave application[C]// 1987 IEEE Int. Microwave Symp. Digs.. Palo Aoto,CA,USA:[s.n.], 1987:607-610.

[3] 姚常飞,徐金平.太赫兹 GaAs肖特基二极管电路模型研究[C]// 2009年全国微波毫米波论文集. 西安:电子工业出版社, 2009. (YAO Changfei,XU Jinping. Analysis and modeling of GaAs Schottky diode for THz application[C]// Paper Collection of 2009 National Conference on Microwave and Millimeter Wave. Xi’an,China:Publishing House of Electronics Industry, 2009.)

[4] 田超,杨浩,董军荣,等.一种指数掺杂的砷化镓平面肖特基变容二极管的设计与制作[J].电子器件, 2011,34(1):29-32. (TIAN Chao,YANG Hao,DONG Junrong,et al. Design and fabrication of GaAs planar Schottky varactor diode with the exponential doping structure[J]. Chinese Journal of Electron Device, 2011,34(1):29-32.)

[5] 张海燕.薄硅外延片的生长及高频肖特基二极管的研制[D].杭州:浙江大学, 2002. (ZHANG Haiyan. Growth of thin silicon epilayer and fabrication of SBD of high frequency[D]. Hangzhou,China:Zhejiang University, 2002.)

[6] 李蓓.肖特基二极管相关材料生长及器件研究[D].杭州:浙江大学, 2003. (LI Bei. Investigation on materials growth and device fabrication of Schottky barrier diodes[D]. Hangzhou,China:Zhejiang University, 2003.)

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罗跃川, 赵妍, 沈昌乐, 阎大伟. 平面肖特基二极管的制作[J]. 太赫兹科学与电子信息学报, 2015, 13(4): 544. LUO Yuechuan, ZHAO Yan, SHEN Changle, YAN Dawei. Fabrication of planar Schottky barrier diode[J]. Journal of terahertz science and electronic information technology, 2015, 13(4): 544.

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