InP基InGaAlAs/InGaAsSb应变量子阱激光器的子带跃迁计算
[1] . 室温工作的AlGaAsSb/InGaAsSb 2 μm多量子阱脊波导半导体激光器[J]. 稀有金属, 2004, 28(3): 574-576.
. . Room temperature AlGaAsSb/InGaAsSb 2 μm ridge-waveguide multi-quantum-well lasers[J]. Chin. J. Rare Metals, 2004, 28(3): 574-576.
[2] . MBE生长AlGaAsSb/InGaAsSb材料的应变控制[J]. 稀有金属, 2004, 28(3): 530-532.
. . Strained AlGaAsSb/InGaAsSb materials grown by molecular beam epitaxy[J]. Chin. J. Rare Metals, 2004, 28(3): 530-532.
[3] . . Molecular beam epitaxial growth and characterization of InGaAsSb quantum wellstructures on InP for lasers operating at 2 μm wavelength region[J]. Technical Report of IEICE, 2003, 103(47): 31-36.
[4] . 用于1.44 μm半导体激光器的GaInAs/InGaAsP量子阱结构的设计[J]. 稀有金属, 2004, 28(3): 511-515.
. Design of GaInAs/InGaAsP quantum wells for 1.44 μm semiconductor lasers[J]. Chin. J. Rare Metals, 2004, 28(3): 511-515.
[5] . GaxIn1-xAs/GaInAsP应变量子阱结构能带的计算[J]. 功能材料与器件学报, 2002, 8(3): 218-222.
. Calculation of band structure of GaxIn1-xAs/GaInAsP strained quantum wells[J]. J. Functional Materials and Devices, 2002, 8(3): 218-222.
[6] . Efficient band-structure calculation of strained quantum wells[J]. Phys. Rev., 1991, 43(12): 9649-9661.
[7] . InGaAs/InGaAlAs应变补偿量子阱激光器及其温度特性研究[J]. 高技术通讯, 2000, 10(2): 50-52.
. InGaAs/InGaAlAs strain-compensated multiple-quantum-well lasers with improved temperture characteristic[J]. High Technology Letters, 2000, 10(2): 50-52.
[8] 李建军, 韩军, 邓军 等. 低阈值高效率InAlGaAs量子阱808 nm激光器[J]. 中国激光, 2006, 33(9): 1159~1162
[9] 马宏, 易新建, 金锦炎 等. MOVPE生长1.3 μm无致冷AlGaInAs/InP应变补偿量子阱激光器研究[J]. 中国激光, 2002, 29(3): 193~196
[10] 张洪波, 韦欣, 朱晓鹏 等. 高饱和电流14xx nm应变量子阱激光器的研制[J]. 中国激光, 2005, 32(2): 161~163
金哲军, 刘国军, 李占国, 李梅. InP基InGaAlAs/InGaAsSb应变量子阱激光器的子带跃迁计算[J]. 光学学报, 2008, 28(s1): 60. Jin Zhejun, Liu Guojun, Li Zhanguo, Li Mei. Inter-Subband Transition Calculation of InP Based InGaAlAs/InGaAsSb Strained Quantum Well Lasers[J]. Acta Optica Sinica, 2008, 28(s1): 60.