无吸收模式滤波结构高亮度大功率宽条形半导体激光器
[1] S. Kallenbach, M. T. Kelemen, R. Aidam et al.. High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm [C]. SPIE, 2005, 5738:406~415
[2] Márc T. Kelemen, Franz Rinner, Joseph Rogg et al.. High-power high-brightness ridge waveguide tapered diode lasers at 940 nm [C]. SPIE, 2002, 4648:75~81
[3] 李辉,刘国军,曲轶 等. 高性能高光束质量808 nm锥形半导体激光器[J]. 中国激光, 2009, 36(s2):11~13
[4] . Salet, F. G′erard, T. Fillion et al.. 1.1 W continuous-wave 1480-nm semiconductor lasers with distributed electrodes for mode shaping[J]. IEEE Photon. Technol. Lett., 1998, 10(12): 1706-1708.
[5] Chih Hung Tsaia, Yi Shin Su, Ching Fuh Lina. Tunable and high-power semiconductor laser with good beam quality in optical-communication band [C]. SPIE, 2005, 5723:227~235
[6] Eckard Deichsel. High-brightness unstable-resonator semiconductor laser diodes [R]. Ulm: Optoelectronics Department, University of Ulm, 2003
[7] 王启明. 中国半导体激光器的历次突破与发展[J].中国激光, 2010, 37(9):2190~2197
[8] 张彦鑫,王警卫,吴迪 等. 一种新型大功率单发射腔半导体激光器及其特性[J]. 中国激光, 2010, 37(5):1186~1191
[9] 乔忠良,薄报学,么艳平 等. 基于AlxNy绝缘介质膜的新型窗口大功率半导体激光器[J]. 中国激光, 2009, 36(9):2277~2281
[10] . F. Iriarte, F. Engelmark, M. Ottosson et al.. Influence of deposition arameters on the stress of magnetron sputter-deposited AlN thin films on Si (100) substrates[J]. J. Mater. Res., 2003, 18(2): 423-432.
乔忠良, 薄报学, 高欣, 张斯钰, 王玉霞, 芦鹏, 李辉, 王勇, 李特, 李再金, 曲轶, 刘国军. 无吸收模式滤波结构高亮度大功率宽条形半导体激光器[J]. 中国激光, 2011, 38(4): 0402003. Qiao Zhongliang, Bo Baoxue, Gao Xin, Zhang Siyu, Wang Yuxia, Lu Peng, Li Hui, Wang Yong, Li Te, Li Zaijin, Qu Yi, Liu Guojun. High Brightness High Power Broad Area Semiconductor Lasers with No-Absorption Mode Filter[J]. Chinese Journal of Lasers, 2011, 38(4): 0402003.