用金属氧化物半导体场效应晶体管器件实现的高重复率电光调Q模块设计

韩永林; 梁伟; 胡永宏

中国激光, 2006, 33 (10): 1329, 网络出版: 2006-10-31

用金属氧化物半导体场效应晶体管器件实现的高重复率电光调Q模块设计

Design of High Repetition Rate Electro-Optically Q-Switched Module with Vertical Metal Oxide Semiconductor Field Effect Transistor Component

论文大纲

韩永林梁伟胡永宏 ^*

作者单位

长春理工大学科技开发中心, 吉林长春 130022

应用光学电光调Q 金属氧化物半导体场效应晶体管器件高重复率 applied optics electro-optically Q-switching vertical metal oxide semiconductor field effect t high repetition rate

摘要

随着激光器的发展,需要高重复率的电光调Q器件。提出了一种新型超快、高重复率的电光调Q技术,这种技术采用V型槽的金属氧化物半导体场效应晶体管(VMOSFET)器件作为调Q模块的主功率开关,运用宽范围可调的高压稳压电源和调Q触发信号整形电路,以及加压调Q和退压调Q的兼容电路。实验中得出：当调Q工作频率为10 kHz时,调Q电压幅度3～5 kV任意可调,电压脉冲宽度小于5 ns,触发抖动时间小于1 μs,且可以长期稳定工作。该调Q模块已经用于激光二极管(LD)抽运的无水冷固体Nd∶YAG激光器和连续Nd∶YAG激光器中。

Abstract

High repetition rate electro-optically Q-switched component is needed with the development of laser. By experiment, a novel ultra quick and high repetition rate electro-optically Q-switched technology is presented. Vertical metal oxide semiconductor field effect transistor (VMOSFET) is adopted as main power switch of Q-switched module. Adjustable high voltage-stabilized source and reshaping circuit of Q-switched trigger signal, as well as the compatible circuit for adding voltage and draw back voltage of Q-switching are used. In the experiment, when the Q-switched module operating at 10 kHz, Q-switched voltage ranges freely from 3 kV to 5 kV, the width of voltage pulse is less than 5 ns, the shaking time of pulse is less than 1 μs, it works steadily and chronically. The Q-switched module has already been used in the laser diode (LD) pumped without water cooling solid Nd∶YAG laser and continuously Nd∶YAG laser.

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韩永林, 梁伟, 胡永宏. 用金属氧化物半导体场效应晶体管器件实现的高重复率电光调Q模块设计[J]. 中国激光, 2006, 33(10): 1329. 韩永林, 梁伟, 胡永宏. Design of High Repetition Rate Electro-Optically Q-Switched Module with Vertical Metal Oxide Semiconductor Field Effect Transistor Component[J]. Chinese Journal of Lasers, 2006, 33(10): 1329.

用金属氧化物半导体场效应晶体管器件实现的高重复率电光调Q模块设计

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