本文介绍新近研制成功的作为电子束曝光用的激光定位干涉系统.文章介绍了光学系统,光路计算结果,并阐述了利用检偏器调节干涉条纹相位的新方法,其定位精度为±0.04μm.

A laser interferometer for sample stage positioning of electron beam lithography is developed. According to the characteristics of the electron beam lithography the optical arrangement and elements are specially considered. High resolution and stability are realized. The optical system of the interferometer, calculated results and the phase change method by polarizers are described. This interferometer setted in a vacuum chamber of a electron beam lithography system has been reliably working over one year. Eepeatabilitj of positioning is determined to be 0.04 micron.