红外与毫米波学报, 2019, 38 (4): 04403, 网络出版: 2019-10-14  

高边缘击穿和扩展光谱的圆形单光子雪崩二极管

Circular single-photon avalanche diode with high premature edge breakdown and extended spectrum
作者单位
1 湘潭大学 物理与光电工程学院,湖南 湘潭 411105
2 湖南师范大学 物理与电子科学学院,湖南 长沙 410081
3 上海大学 机电工程与自动化学院,上海 200444
摘要
介绍了一种0.18 μm互补金属氧化物半导体(CMOS)技术的新型宽光谱荧光相关谱探测器,其为高边缘击穿、扩展光谱和低暗计数率的圆形单光子雪崩二极管(SPAD).该器件由p+/deep n-well结,p-well保护环和多晶硅保护环组成.通过Silvaco TCAD 3D器件仿真,直径为10 μm的圆形p+/deep n-well SPAD器件具有较高边缘击穿特性.此外,p+/deep n-well结SPAD比p+/n-well结SPAD具有更长的波长响应和扩展光谱响应范围.该器件在0.5 V过量偏压下,可在490~775 nm波长范围内实现超过40%的光子探测率.该圆形p+/deep n-well SPAD器件在25℃时具有较好雪崩击穿为15.14 V,具有较低暗计数率为638 Hz.
Abstract
This paper presents a 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology high premature edge breakdown, extended spectrum and low dark count rate circular single-photon avalanche diode (SPAD) which together form a novel wide spectrum fluorescence correlation spectroscopy (FCS) detector. The circular device consists of a p+/deep n-well junction, a p-well guard-ring, and a poly guard-ring. Simulations on a Silvaco TCAD 3D device also show that the 10 μm-diameter circular p+/deep n-well SPAD device has high premature edge breakdown characteristics. Moreover,compared to the SPAD p+/n-well junction, the p+/deep n-well junction has a longer wavelength response and spectral expansion. The device achieves wide spectral sensitivity enabling greater than 40% photon detection probability from 490 to 775 nm wavelength at 0.5 V excess bias. The circular p+/deep n-well SPAD has fine avalanche breakdown (15.14 V) and a low dark count rate of 638 Hz at 25℃.
参考文献

[1] YANG Hong-Jiao, JIN Xiang-Liang. Minimization design of guard ring size of p-well / DNW single photon avalanche diode [J]. Journal of Infrared and Millimeter Waves(杨红姣, 金湘亮. p-well/DNW单光子雪崩二极管保护环的最小化设计. 红外与毫米波学报,2018, 37(5): 527-532.

[2] Pancheri L, Massari N, Stoppa D. SPAD image sensor with analog counting pixel for time-resolved fluorescence detection[J]. Electron Devices, IEEE Transactions on, 2013, 60(10):3442-3449.

[3] Takeuchi S, Kim J, Yamamoto Y, et al. Development of a high-quatum efficiency single-photon counting system[J]. Appl. Phys. Lett. 1999, 74(8):1063-1065.

[4] Cova S, Ghioni M, Lacaita A, et al. Avalanche photodiodes and quenching circuits for single-photon detection[J]. Appl. Opt. 1996, 35(12):1956-1976.

[5] Karami M A, Gersbach M, Yoon H J, et al. A new single-photon avalanche diode in 90nm standard CMOS technology [J]. Optics Express, 2010, 18(21):22158.

[6] Rochas A, Gani M, Furrer B, et al. Single photon detector fabricated in a complementary metal–oxide–semiconductor high-voltage technology[J]. Review of Scientific Instruments, 2003, 74(7):3263.

[7] Niclass C, Rochas A, Besse P A et al. Design and Characterization of a CMOS 3-D Image Sensor Based on Single Photon Avalanche Diodes[J]. J. Solid-State Circuits, 2005, 40(9):1847-1854.

[8] YANG Jia, JIN Xiang-Liang, YANG Hong-Jiao, et al. Design and analysis of a novel low dark count rate SPAD [J]. Journal of Infrared and Millimeter Waves(杨佳,金湘亮,杨红姣. 一种新型低暗计数率单光子雪崩二极管的设计与分析, 红外与毫米波学报),2016,35(4): 394-397.

[9] Leitner T, Feiningstein A, Turchetta R, et al. Measurements and simulations of low dark count rate single photon avalanche diode device in a low voltage 180 nm CMOS image sensor technology[J]. IEEE Transactions on Electron Devices, 2013,60(6):1982-1988.

[10] Mandai S, Fishburn M W, Maruyama Y, et al. A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology[J]. Optics Express, 2012,20(6):5849-57.

[11] Veerappan C, Charbon E . A substrate isolated CMOS SPAD enabling wide spectral response and low electrical crosstalk[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2014,20(6):1-7.

[12] Gyongy I, Davies A, Gallinet B, et al. Cylindrical microlensing for enhanced collection efficiency of small pixel SPAD arrays in single-molecule localisation microscopy[J]. Optics Express, 2018,26(3):2280-2291.

[13] Tseng C K, Chen K H, Chen W T, et al. A high-speed and low-breakdown-voltage silicon avalanche photodetector[J]. IEEE Photonics Technology Letters, 2014,26(6):591-594.

[14] Moreno-Garcia M, del Rio R, Guerra O, et al. 5×5 SPAD matrices for the study of the trade-offs between fill factor, dark count rate and crosstalk in the design of CMOS image sensors[C]. Microelectronics and Electronics (PRIME),2014, 1-4.

[15] Faramarzpour N, Deen M J, Shirani S, et al. Fully integrated single photon avalanche diode detector in standard CMOS 0.18 μm technology[J]. IEEE Transactions Electron Devices, 2008, 55(3):760-767.

[16] Richardson J A, Webster E A G, Grant L A, et al. Scaleable single-photon avalanche diode structures in nanometer CMOS technology[J]. IEEE Transactions on Electron Devices, 2011, 58(7):2028-2035.

金湘亮, 曾朵朵, 彭亚男, 杨红娇, 蒲华燕, 彭艳, 罗均. 高边缘击穿和扩展光谱的圆形单光子雪崩二极管[J]. 红外与毫米波学报, 2019, 38(4): 04403. JIN Xiang-Liang, ZENG Duo-Duo, PENG Ya-Nan, YANG Hong-Jiao, PU Hua-Yan, PENG Yan, LUO Jun. Circular single-photon avalanche diode with high premature edge breakdown and extended spectrum[J]. Journal of Infrared and Millimeter Waves, 2019, 38(4): 04403.

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