增益腔模失配型高温工作垂直腔面发射半导体激光器
[1] K. Iga. Surface-emitting laser-its birth and generation of new optoelectronics field［J］. IEEE J. Selected Topics in Quantum Electronics, 2000, 6(6): 1201～1213
[2] 张立森, 宁永强, 张星 等. 高功率窄脉冲垂直腔面发射激光器n-DBR反射率的优化［J］. 中国激光, 2012, 39(5): 0502003
[3] 贾宝辉, 刘超, 付莉 等. 激光心肌血运重建联合血管内皮祖细胞移植治疗缺血性心脏病［J］. 中国激光, 2010, 37(6): 1654～1658
[4] R. Rossbach, T. Ballmann, R. Butendeich et al.. Red VCSEL for high-temperature applications［J］. J. Crystal Growth. 2004, 272(1-4): 549～554
[5] I. A. Derebezov, V. A. Haisler, A. K. Bakarov et al.. Single-mode vertical-cavity surface-emitting lasers for atomic clocks［J］. Optoelectronics, Instrumentation and Data Processing, 2009, 45(4): 361～366
[6] A. Al-Samaneh, M. B. Sanayeh, S. Renz et al.. Polarization control and dynamic properties of VCSELs for MEMS atomic clock applications［J］. Photonics Technology Letters, 2011, 23(15): 1049～1051
[7] E. Soderberg, P. Modh, J. S. Gustavsson et al.. High speed, high temperature operation of 1.28 μm singlemode InGaAs VCSELs［J］. Electronics Letters, 2006, 42(17): 978～979
[8] K. Johnson, M. Hibbs-Brenner, W. Hogan et al.. Record high temperature, high output power red VCSELs［C］. SPIE, 2011, 7952: 795208
[9] S. Mogg, N. Chitica, U. Christiansson et al.. Temperature sensitivity of the threshold current of long-wavelength InGaAs-GaAs VCSELs with large gain-cavity detuning［J］. J. Quantum Electronics, 2004, 40（5）: 453～461
[10] J. Wu, W. Xiao, Y. M. Lu. Temperature and wavelength dependence of gain and threshold current detuning with cavity resonance in vertical-cavity surface-emitting lasers［J］. IET Optoelectron., 2007, 1(5): 206～210
[11] 史晶晶,田振华, 秦莉 等. 850 nm大功率垂直腔面发射激光器［J］. 光电子·激光, 2010, 21(10): 1445～1448
Shi Jingjing, Tian Zhenhua, Qin Li et al.. 850 nm high power vertical-cavity surface-emitting lasers［J］. J. Optoelectronics and laser, 2010, 21(10): 1445～1448
[12] 杜宝勋. 半导体激光器原理[M]. 第2版北京: 兵器工业出版社, 2004. 137～174
Du Baoxun. Semiconductor Laser Theory: second edition［M］. 2nd edition Beijing: The Publish of Enginery Industry, 2004. 137～174
[13] P. M. Enders. Enhancement and spectral shift of optical gain in semiconductors from non-Markovian intraband relaxation［J］. J. Quantum Eelctronics, 1997, 33(4): 580～588
[14] Y. M. Deng. Gallium Arsenide Based Semiconductor Laser Design and Growth by Metal-Organic Chemical Vapor Deposition［D］. California: The Graduate School University of Southern California, 2006. 9～12
[15] S. F. Yu. Analysis and Design of Vertical Cavity Surface Emitting Lasers［M］. Wiley Interscience publication, 2003. 75～77
[16] 王小东, 吴旭明, 王青 等. 具有非均匀渐变界面DBR的光学特性分析［J］. 物理学报, 2006, 55(10): 4983～4986
Wang Xiaodong, Wu Xuming, Wang Qing et al.. Optical characteristics of DBR with inhomogeneous graded interfaces［J］. Acta Physia Sinica, 2006, 55(10): 4983～4986
[17] P. P. Baveja, B. Kgel, P. Westbergh et al.. Impact of device parameters on thermal performance of high-speed oxide-confined 850 nm VCSELs［J］. J. Quantum Electronics, 2012, 48(1): 17～26
[18] Y. A. Chang, J. R. Chen, H. C. Kuo et al.. Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850 nm vertical-cavity surface-emitting lasers[J]. J. Lightwave Technology, 2006, 24(1): 536～542
[19] M. Hong, J. P. Mannaerts. A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors［J］. J. Crystal Growth, 1991, 111(1): 1071～1075
[20] T. Li, Y. Q. Ning, E. J. Hao et al.. Design and optimization of DBR in 980 nm bottom-emitting VCSEL ［J］. Science in China Series F: Information Sciences, 2009, 52(7): 1266～1271
张建伟, 宁永强, 张星, 曾玉刚, 张建, 刘云, 秦莉, 王立军. 增益腔模失配型高温工作垂直腔面发射半导体激光器[J]. 中国激光, 2013, 40(5): 0502001. Zhang Jianwei, Ning Yongqiang, Zhang Xing, Zeng Yugang, Zhang Jian, Liu Yun, Qin Li, Wang Lijun. Gain-Cavity Mode Detuning Vertical Cavity Surface Emitting Laser Operating at the High Temperature[J]. Chinese Journal of Lasers, 2013, 40(5): 0502001.
PDF全文
