II类超晶格红外探测器一般通过台面结实现对红外辐射的探测，而通过离子注入实现横向PN结，一方面材料外延工艺简单，同时可以利用超晶格材料横向扩散长度远高于纵向的优势改善光生载流子的输运，且易于制作高密度平面型阵列。本文利用多种材料表征技术，研究了不同能量的Si离子注入以及退火前后对InAs/GaSb II类超晶格材料性能的影响。研究通过Si离子注入，外延材料由P型变为N型，超晶格材料中产生了垂直方向的拉伸应变，晶格常数变大，且失配度随着注入能量的增大而增大，注入前失配度为-0.012%，当注入能量到200 keV时，失配度达到0.072%，超晶格部分弛豫，弛豫程度为14%，而在300 °C 60 s退火后，超晶格恢复完全应变状态，且晶格常数变小，这种张应变是退火引起的Ga-In相互扩散以及Si替位导致的晶格收缩而造成的。

Class II superlattice infrared detectors generally detect infrared radiation through mesa junction, while transverse PN junction is realized through ion implantation. On the one hand, the material epitaxy process is simple, and at the same time, the advantages of superlattice material that the transverse diffusion length is far higher than the longitudinal can be used to improve the transport of photogenerated current carriers, and it is easy to make high-density planar arrays. In this paper, the effects of Si ion implantation with different energies and annealing on the properties of InAs/GaSb type II superlattice materials were studied by using a variety of material characterization techniques. Through Si ion implantation, the epitaxial material changes from P type to N type, and the vertical tensile strain is generated in the superlattice material. The lattice constant becomes larger, and the mismatch increases with the increase of implantation energy. The mismatch before implantation is -0.012%. When the implantation energy reaches 200 keV, the mismatch reaches 0.072%, and the superlattice partially relaxes, with the relaxation degree of 14%. After annealing at 300 ° C for 60 s, the superlattice returns to the fully strained state, and the lattice constant becomes smaller, This tensile strain is caused by the diffusion of Ga-In caused by annealing and lattice shrinkage caused by Si substitution.