光学学报, 2008, 28 (12): 2431, 网络出版: 2008-12-17   

4H-SiC基底Al2O3/SiO2双层减反射膜的设计和制备

Design and Fabrication of Al2O3/SiO2 Double-Layer Antireflection Coatings on 4H-SiC Substrate
作者单位
1 厦门大学物理系, 福建 厦门 361005
2 中国科学院上海光学精密机械研究所, 上海 201800
摘要
在4H-SiC基底上设计并制备了Al2O3/SiO2紫外双层减反射膜, 通过扫描电镜(SEM)和实测反射率谱来验证理论设计的正确性。利用编程计算得到Al2O3和SiO2的最优物理膜厚分别为42.0 nm和96.1 nm以及参考波长λ=280 nm处最小反射率为0.09%。由误差分析可知, 实际镀膜时保持双层膜厚度之和与理论值一致有利于降低膜系反射率。实验中应当准确控制SiO2折射率并使Al2O3折射率接近1.715。用电子束蒸发法在4H-SiC基底上淀积Al2O3/SiO2双层膜, 厚度分别为42 nm和96 nm。SEM截面图表明淀积的薄膜和基底间具有较强的附着力。实测反射率极小值为0.33%, 对应λ=276 nm, 与理论结果吻合较好。与传统SiO2单层膜相比, Al2O3/SiO2双层膜具有反射率小, 波长选择性好等优点, 从而论证了其在4H-SiC基紫外光电器件减反射膜上具有较好的应用前景。
Abstract
Al2O3/SiO2 double-layer UV antireflection coatings were designed and fabricated on 4H-SiC substrate, and the validity of theoretical design was further verified by scanning electron microscope (SEM) and reflection spectrum. The optimal physical thickness of Al2O3 and SiO2 is 42.0 nm and 96.1 nm respectively by programming calculation. And then the minimum reflectance of 0.09% is obtained at reference wavelength λ=280 nm. According to error analysis, keeping the sum of double-layer thickness consistent with theoretical value is helpful to reduce the reflectance. In addition, the refractive index of SiO2 should more accurate and the refractive index of Al2O3 should be controlled close to 1.715 in the experiment. Al2O3/SiO2 double-layer coatings were deposited on 4H-SiC substrate by electron beam evaporation and the physical thickness is 42 nm and 96 nm respectively. SEM images show that the deposited layers and the substrate perform good adhesion to each other. The practical minimum reflectance is 0.33% at λ=276 nm which is close to theoretical value. Compared with conventional SiO2 single layer, Al2O3/SiO2 double-layer coatings show low reflectance and better wavelength selectivity. These results make the possibility for 4H-SiC based UV optoelectronic devices with Al2O3/SiO2 films as antireflection coatings.
参考文献

[1] . . 4H-SiC UV photo detectors with large area and very high specific detectivity[J]. IEEE J. Quant. Electron., 2004, 40(9): 1313-1320.

[2] . Monroy, F. Omnes, F. Calle. Wide-bandgap semiconductor ultraviolet photodetectors[J]. Semicond. Sci. Technol., 2003, 18(4): R33-R51.

[3] 谭天亚,黄建兵,占美琼 等. LBO晶体上1064 nm, 532 nm二倍频增透膜的设计及误差分析[J]. 中国激光, 2006, 33(2): 242~247

    Tan Tianya, Huang Jianbing, Zhan Meiqiong et al.. Design and error analysis of 1064 nm, 532 nm frequency-doubled antireflection coating for LBO[J]. Chin. J. Lasers, 2006, 33(2): 242~247

[4] 徐江峰, 陈秋灵. 增透膜的遗传算法设计[J]. 中国激光, 2007, 34(9): 1271~1275

    Xu Jiangfeng, Chen Qiuling. Anti-reflection coating designed by genetic algorithm[J]. Chin. J. Lasers, 2007, 34(9): 1271~1275

[5] A. Sciuto, F. Roccaforte, S. Di Franco et al.. Photocurrent gain in 4H-SiC interdigit Schottky UV detectors with a thermally grown oxide layer[J]. Appl. Phys. Lett., 2007, 90(22): Art.No.223570

[6] . Visible blind p-i-n ultraviolet photodetector fabricated on 4H-SiC[J]. Microelectron. Engng., 2006, 83(1): 104-106.

[7] . Zhang, H. Zhu, W. Yang et al.. Al2O3/SiO2 films prepared by electron-beam evaporation as UV antireflection coatings on 4H-SiC[J]. Appl. Surf. Sci., 2008, 254(10): 3045-3048.

[8] . Zhu, D. Johnstone, J. Leach et al.. High power photoconductive switches of 4H SiC with Si3N4 passivation and n+-GaN subcontact[J]. Superlattices Microstruct., 2007, 41(4): 264-270.

[9] . Zhao et al.. Highly sensitive visible-blind extreme ultraviolet Ni/4H-SiC Schottky photodiodes with large detection area[J]. Opt. Lett., 2006, 31(11): 1591-1593.

[10] Avice M, Grossner U, Pintilie I et al.. Comparison of near-interface traps in Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC structures[J]. Appl. Phys. Lett., 2006, 89(22): Art.No.222103

[11] . Paskaleva, R. R. Ciechonski, M. Syvajarvi et al.. Electrical behavior of 4H-SiC metal-oxide-semiconductor structures with Al2O3 as gate dielectric[J]. J. Appl. Phys., 2005, 97(12): 124507-1.

[12] J. T. Cox, G. Hass, R. F. Rowntree. Two-layer anti-reflection coatings for glass in the near infra-red[J]. Vacuum, 1954, Ⅳ(4): 445~455

[13] 袁景梅, 汤兆胜, 齐红基 等. 几种紫外薄膜材料的光学常数和性能分析[J]. 光学学报, 2003, 23(8): 984~988

    Yuan Jingmei, Tang Zhaosheng, Qi Hongji et al.. Analysis of optical property for several ultraviolet thin film materials[J]. Acta Optica Sinica, 2003, 23(8): 984~988

[14] . S. Shamala, L. C. S. Murthy, K. Narasimha Rao. Studies on optical and dielectric properties of Al2O3 thin films prepared by electron beam evaporation and spray pyrolysis method[J]. Mat. Sci. Eng. B-Solid, 2004, 106(3): 264-294.

[15] . Reflectance of thinly oxidized silicon at normal incidence[J]. Appl. Opt., 1979, 18(12): 1927-1932.

[16] Michael E. Levinshtein, Sergey L. Rumyantsev, Michael S. Shur. 先进半导体材料性能与数据手册[M]. 杨树人, 殷景志 译, 北京: 化学工业出版社, 2003. 169~170

    Michael E. Levinshtein, Sergey L. Rumyantsev, Michael S. Shur. Properties of Advanced Semiconductor Materials[M]. Yang Shuren, Yin Jingzhi transl., Beijing: Chemical Industry Press, 2003. 169~170

[17] 谭天亚, 黄建兵, 占美琼 等. 三硼酸锂晶体上1064 nm,532 nm,355 nm三倍频增透膜的设计[J]. 光学学报, 2007, 27(7): 1327~1332

    Tan Tianya, Huang Jianbing, Zhan Meiqiong et al.. Design of 1064 nm, 532 nm, 355 nm frequency-tripled antireflection coating for LBO[J]. Acta Optica Sinica, 2007, 27(7): 1327~1332

[18] R. Thielsch, A. Gatto, J. Heber et al.. A comparative study of the UV optical and structural properties of SiO2, Al2O3 and HfO2 single layers deposited by reactive evaporation, ion-assisted deposition and plasma ion-assisted deposition[J]. Thin Solid Films, 2002, 410(1~2): 86~93

黄火林, 张峰, 吴正云, 齐红基, 姚建可, 范正修, 邵建达. 4H-SiC基底Al2O3/SiO2双层减反射膜的设计和制备[J]. 光学学报, 2008, 28(12): 2431. 黄火林, 张峰, 吴正云, 齐红基, 姚建可, 范正修, 邵建达. Design and Fabrication of Al2O3/SiO2 Double-Layer Antireflection Coatings on 4H-SiC Substrate[J]. Acta Optica Sinica, 2008, 28(12): 2431.

本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!