Saturated absorption of different layered Bi2Se3 films in the resonance zone
1 College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
2 State Key Laboratory of High Performance Computing, National University of Defense Technology, College of Computer, Changsha 410073, China
3 National Institute of Defense Technology Innovation, Academy of Military Sciences PLA China, Beijing 100010, China
4 e-mail: oscarwang2008@sina.com
Figures & Tables
Fig. 1. Schematic diagram of the open-aperture micro P-scan system. A 1/2 wavelength slide and a Glan prism are used to modulate the intensity of the laser. The chopper modulates the laser from 1 kHz to 500 Hz. An IDS camera and a Mitutoyo near-infrared objective lens (20×, NA=0.40) are used to build up the video microscope system (VMS). Two lock-in amplifiers are used to measure the power of the laser.
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Fig. 2. Characterization of the continuous layered Bi2Se3 films. (a) Streaks of Bi2Se3 on Al2O3 substrate. The lattice constant values of the epitaxy Bi2Se3 film is 4.194 Å. (b) AFM profile of layered Bi2Se3 film. (c) Raman spectra of these five different quintuple layer (QL) films. (d) LAS of different QL films. The peak absorption wavelengths of different QLs are 506, 572, 616, 626, and 650 nm.
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Fig. 3. Transmission spectra induced by the 600, 700, and 800 nm lasers. (a), (c), (e) Summary curves of different Bi2Se3 films (2 QL, 4 QL, 8 QL, 10 QL, 16 QL) excited by 600, 700, and 800 nm lasers; (b), (d), (f) fitting curves of Bi2Se3 (16 QL) fitted by different models excited by 600, 700, and 800 nm lasers.
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Fig. 4. (a) Diagrammatic sketch of carrier transition in BisSe3. Different from linear excitation, nonlinear excitation will pump the electrons from the valence band to the conduction band rather than from the Fermi level. (b), (c), (d) Saturation intensity/intrinsic nonlinear absorption coefficient/FCA cross section of Bi2Se3 with different thickness excited by 600 to 800 nm lasers, where αNL0 is the intrinsic nonlinear absorption coefficient and Is is the saturation intensity of αNL0.
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Fig. 5. Relaxation process of carriers in 16-layer Bi2Se3 films excited by 600–660 nm lasers. When the photon energy descends from ∼2.07 eV (600 nm) to ∼1.88 eV (660 nm), the fast relaxation time (τ1) of carriers corresponding to the band increases from 0.64 to 0.83 ps.
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Table1. FCA Cross Section of Films under Different Excitation Wavelengths (, )
| | Wavelength (nm) | | Layer (QL) | 600 | 700 | 800 | | 2 | N.A | 0.922 | 0.189 | | 4 | 1.61 | 0.338 | 0.125 | | 8 | 42.69 | 0.122 | 0.0978 | | 10 | 276.73 | 0.0948 | 0.0770 | | 16 | 7214.54 | 0.0913 | 0.0773 |
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Table2. Saturation Intensity of Films under Different Excitation Wavelengths ()
| | Wavelength (nm) | | Layer (QL) | 600 | 700 | 800 | | 2 | 0.69 | 2.09 | 3.92 | | 4 | 1.45 | 3.34 | 4.43 | | 8 | 3.45 | 4.68 | 5.72 | | 10 | 5.29 | 5.42 | 6.65 | | 16 | 6.10 | 6.79 | 8.27 |
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Table3. Nonlinear Absorption Coefficient of Films under Different Excitation Wavelengths (cm/GW, )
| | Wavelength (nm) | | Layer (QL) | 600 | 700 | 800 | | 2 | NA | −34.77 | −59.698 | | 4 | −9.76 | −16.42 | −34.281 | | 8 | −3.94 | −7.81 | −9.981 | | 10 | −3.83 | −6.72 | −8.375 | | 16 | −3.31 | −4.01 | −4.32 |
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Table4. Modulation Depth of (Unit: dB)
| Wavelength (nm) | | Layer (QL) | 600 | 700 | 800 | | 2 | N.A | 0.092 | 0.065 | | 4 | 0.043 | 0.17 | 0.086 | | 8 | 0.098 | 0.21 | 0.13 | | 10 | 0.25 | 0.37 | 0.19 | | 16 | 0.68 | 0.43 | 0.28 |
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Jun Zhang, Tian Jiang, Tong Zhou, Hao Ouyang, Chenxi Zhang, Zheng Xin, Zhenyu Wang, Xiang’ai Cheng. Saturated absorption of different layered Bi2Se3 films in the resonance zone[J]. Photonics Research, 2018, 6(10): 100000C8.
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