激光与光电子学进展, 2019, 56 (19): 190004, 网络出版: 2019-10-12 复制并引用该论文  被引通知

图 & 表

图 1. 电抽运垂直外腔面发射半导体激光器的腔内倍频534.7 nm激光器[7]

Fig. 1. Intracavity frequency doubling 534.7 nm laser based on electrically pumped vertical external-cavity surface-emitting semiconductor laser[7]

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图 2. 光抽运半导体盘式激光器的腔内倍频530 nm绿激光器[11]

Fig. 2. Intracavity frequency doubling 530 nm green laser based on optically pumped semiconductor chip laser[11]

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图 3. 全固态腔内倍频绿激光器示意图[15,17]

Fig. 3. Diagram of all-solid-state intracavity frequency doubled green laser [15,17]

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图 4. 多发光点抽运的列阵型绿激光器示意图[29]。(a)列阵型绿激光器上视图;(b)列阵型绿激光器侧视图

Fig. 4. Diagrams of array green laser pumped by multiple luminous points[29]. (a) Top view of array green laser; (b) side view of array green laser

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图 5. Spectralus微晶片绿光模组[35]。(a) Nd∶YVO4和PPMgLN键合晶体; (b)输出光斑; (c)绿激光器模组

Fig. 5. Green module of Spectralus microship[35]. (a) Nd∶YVO4/PPMgLN bonding crystal; (b) output light spot; (c) green laser package

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图 6. 光胶合绿光模组的示意图和实物图[38]。(a)光胶合绿光模组示意图; (b)光胶合绿光模组实物图

Fig. 6. Schematic and physical drawings of optical-contact green module[38]. (a) Schematic drawing of optical-contact green module; (b) physical drawing of optical-contact green module

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图 7. M-green示意图与实物图[41]

Fig. 7. Schematic and physical drawings of M-green module[41]

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图 8. 多束M-green激光器模组示意图[43]

Fig. 8. Diagram of multi-beam M-green laser[43]

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表 1半导体激光器腔内倍频的输出参数(OO为光-光转换效率;EO为电-光转换效率)

Table1. Output parameters of intracavity frequency doubled semiconductor lasers (OO: optical-to-optical conversion efficiency; EO: electro-optical conversion efficiency)

Year Research institute LD cavity Gain medium PPMgLN Output parameters 2004[6] Novalux, USA Electricallypumped VECSEL GaAs PPLN 30 mW, single-frequency,M2<1.2,stability 0.5% 2009[7] University ofGlamorgan, UK Electrically pumped VECSELA 49-edge-emitter laser bar Oclaro 10 mm,6.92 μm 534.7 nm, 1.31 W,EO 1.5%, OO 3.1% 2010[8] University ofGlamorgan, UK Electrically pumped VECSELA 49-edge-emitter laser bar Oclaro 10 mm,6.92 μm 534.2 nm, 1.2 W,temperature bandwidth 1 ℃ 2014[9] PrincetonOptronics,Inc., USA Electricallypumped VECSEL InGaAs/GaAs 7 mm,6.94 μm 531 nm, 4.74 W, EO 18.3%,M2≈13, stability ±1.4% 2015[10] PrincetonOptronics,Inc., USA Electricallypumped VECSEL InGaAs/GaAs 7 mm,6.94 μm 532 nm, 3.34 W,EO 21.2%, M2 ≈ 13 2011[11] OSRAM,Germany Opticallypumped VECSEL VECSEL chip 1 mm 530 nm, 150 mW,5-10 mrad, EO 18%,M2≈1, single-frequency 2008[12] OSRAM,Germany Optically pumpedsemiconductor disk lasers OPS chip 1.2 mm 530 nm, 80 mW,<10 mrad, EO 7%, M2≈1,single-frequency

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表 2普通全固态激光器的腔内倍频输出参数

Table2. Output parameters of intracavity frequency doubled all-solid-state lasers

Year Research institute PPMgLN, gain crystal Cavity Output parameters 2008[13] Matsushita Electric IndustrialCo., Ltd., Japan 0.5 mm, 7 μmNd∶YVO4 Straight 0.7 W, OO 30%, EO 11.8%,operation temperature range 30 ℃ 2008[14] Matsushita Electric IndustrialCo., Ltd., Japan 0.5 mm, 7 μmNd∶YVO4 Straight 1.7 W, OO 39.2%, EO 18.9%,operation temperature range 46 ℃ 2008[15] Chinese Academyof Sciences 10 mm Nd∶YVO4 Straight 908 mW, OO 33.5%, stability2.5%, temperature bandwidth ≈10 ℃ 2009[16] Chinese Academyof Sciences 3 mm, 6.9 μmNd∶YVO4 V-shaped 6.67 W, OO 33.35%,stability 3% 2010[17] Chinese Academyof Sciences 2 mm, 6.93 μmNd∶YVO4 Straight 1.56 W, OO 52%,temperature bandwidth 15 ℃ 1 mm, 6.93 μmNd∶YVO4 Straight 1.52 W, OO 50.7%,temperature bandwidth 12 ℃ 2011[18] Qingdao University 12 mm, 6.95 μmNd∶YVO4 Straight 1.2 W, OO 30%,peak power 910 W 2011[19] McMaster University,Canada 2 mm, 7 μmNd∶YVO4 Straight 1.02 W, OO 37.2%,stability 4% 2011[20] McMaster University,Canada 1 mm Nd∶YVO4 Straight 1.1 W, OO 37.3%, EO >19%,1.2 temperature tolerance > 30 ℃ 2011[21] Chinese Academyof Sciences 1 mm, 6.95 μmNd∶YVO4 Straight 3.8 W, OO 56%,stability 2.5% 2012[22] Xiamen University 2.5 mm, 7 μmNd∶YVO4 Straight 6.2 W, OO 43%,stability 5% 2012[23] Nanjing University 4.8 mm, 6.76 μmNd∶GdVO4 Z-shaped 531.5 nm, 2.4 W, OO 16%, stability5%, temperature bandwidth 7 ℃ 2014[24] Chinese Academyof Sciences 1 mm, 6.96 μmNd∶YVO4 Straight 1.84 W, OO 51%,stability 1% 2014[25] Chinese Academyof Sciences 2 mm, 6.96 μmNd∶YVO4 Straight 5.6 W, OO 51%, stability 5%,temperature bandwidth 12 ℃ 2014[26] ShandongUniversity 2 mm, 7.55 μm,Nd∶Mg∶LiTaO3 V-shaped 546 nm, 102 mW, OO 2.3% 7.55, 7.38, 7.22 μm and2 mm, Nd∶Mg∶LiTaO3 V-shaped 546, 542, 538 nm,62.8 mW, OO 1.4% 2015[27] Nanjing University ofInformation Science & Technology PPLN, 1.3 mm,7 μm Nd∶YVO4 Straight 1.343 W, OO 32.8%,stability 2% 2018[28] Shandong NormalUniversity 5 mm, 6.92 μmYb∶LYSO Z-shaped 529 nm, 90 mW,stability 5%

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表 3多点LD列阵抽运结构Nd∶YVO4/PPMgLN激光器的输出参数

Table3. Output parameters of Nd∶YVO4/PPMgLN laser pumped by multi-point LD array

Year Research institute LD PPMgLN Output parameters 2008[29] Mitsubishi ElectricCorporation, Japan 15 arrayed LD Planar-waveguide4 mm Average power 7.6 W, peakpower 10.9 W, OO 40%, EO 20% 2009[30] Mitsubishi ElectricCorporation, Japan 15 arrayed LD Planar-waveguide4 mm CW 10.8 W,OO 40%, EO 20% pulse: peak power 11.4 W,average power 3.8 W, OO 42% 2009[31] Mitsubishi ElectricCorporation, Japan 15 arrayed LD Planar-waveguide4 mm CW 10.8 W, OO 40%, EO 20%,temperature bandwidth 40 ℃ 2016[32] Chinese Academyof Sciences 19 arrayed LD 2 mm, 6.95 μm 3.12 W, OO 9.2%

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表 4Nd∶YVO4/PPMgLN模组激光器的输出参数

Table4. Output parameters of green lasers with Nd∶YVO4/PPMgLN modules

Year Research institute Module Output parameters 2009-2011[33-36] Spectralus Corporation, USA Monolithic cavity 250 mW, stability 5%, OO 30%, EO >10% 2010[37] McMaser University, Canada Optical-contact Average power 450 mW, peak power541.5 mW, OO 33.5%, EO 16.25% 2013[38] Chinese Academy of Sciences Optical-contact 295 mW, OO 25.5%, stability 2.5% 2016[39] Yunnan Normal University Optical-contact 2 arrayed LD, 200 mW, OO 21.7% 2017[40] Chinese Academy of Sciences Optical-contact 3 arrayed LD, 223.7 mW, stability ±2.5% 2012[41] McMaser University, Canada M-green 1.02 W (4 W 808 pump), OO 25.5% 2012[42] McMaser University, Canada M-green 1.15 W (3 W 808 pump) , OO 38.5% 2013[43] McMaser University, Canada M-green 6-beam array,6.47 W, OO 29.9% 2013[44] McMaser University, Canada M-green 1.28 W (4.4 W 808 pump), OO 29.1% 2018[45] McMaser University, Canada M-green 2.9 W, OO >40%

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表 5脉冲绿激光器的输出参数

Table5. Outputparameters of pulsed green lasers

Year Researchinstitute PPLN Pulsemode Average outputpower Pulsewidth RepetitionRate Peakpower 2011[46] Qingdao University 12 mm,6.95 μm Cr∶YAG,Q-switched 765 mW 12 ns 70 kHz 910 W 2017[47] Nanjing University ofInformation Science & Technology 1.2 mm MoS2,Q-switched 323 mW 320 ns 66.7 kHz 15 W 2018[48] Nanjing University ofInformation Science & Technology 1.3 mm,7 μm Graphene oxide,Q-switched 536 mW 98 ns 71.4 kHz 76.6 W 2018[49] Nanjing University ofInformation Science & Technology 1.2 mm,7 μm MoS2,mode-locked 757 mW 3.5ps 87.2 MHz 2.49 kW

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林洪沂, 吴铭钰, 孙栋, 唐杰, 阮剑剑. 准相位匹配PPMgLN腔内倍频绿激光器研究进展[J]. 激光与光电子学进展, 2019, 56(19): 190004. Hongyi Lin, Mingyu Wu, Dong Sun, Jie Tang, Jianjian Ruan. Research Progress of Green Lasers Based on Quasi-Phase-Matched Intracavity Frequency Doubling in PPMgLN[J]. Laser & Optoelectronics Progress, 2019, 56(19): 190004.