硅光电二极管激光损伤阈值随激光脉宽的变化
罗福, 江继军, 孙承纬. 硅光电二极管激光损伤阈值随激光脉宽的变化[J]. 强激光与粒子束, 2004, 16(6): 685.
LUO Fu, JIANG Ji-jun, SUN Cheng-wei. Variation in damage thresholds of Si photodiodes with laser pulse duration[J]. High Power Laser and Particle Beams, 2004, 16(6): 685.
[1] Sjoqvist L.Laser induced damage in detector materials and detectors[R].FOA-R-96-00281-3.1-SE,i996,PB97-128391/HDM.
[2] Bartoli F,Esterowitz L,Kruer M,et al.Irreversible laser damage in IR detector materials[J].Appl Opt,1977,16(11):2934- 2937.
[3] 陈德章,张承铨,卿光弼,等.激光对光电探测器的损伤阈值研究[J].激光技术,1995,19(3):135-140.
Chen D Z,Zhang C Q,Qing G B,et al.Research on laser damage threshold of photoelectric detector.Laser Technology,1995,19(3):135-140.
[4] 钟海荣,刘天华,陆启生,等.激光对光电探测器的破坏机理研究综述[J].强激光与粒子束,2000,12(4):423-428.
Zhong H R.Liu T H,Lu Q S,et al.Review on laser-induced damage mechanism study of photoelectric detectors.High Pozwer Laser and Particle Beams,2000,12(4):423-428.
[5] Watkins S E,Zhang C Z,Walser R M,et al.Laser-induced parameter degradation in silicon photodiodes[A].Laser induced damage in optical materials[C].1988.288-310.
[6] 陆启生,蒋志平,刘泽金,等.激光辐照下InSb探测器(PV型)的瞬变行为[J].强激光与粒子束,1991,3(1):102-108.
Lu Q S,Jiang Z P,Liu Z J,et al.Transient behavior of InSb(PV) detector irradiated by laser.High Power Laser and Particle Beams,1991,3( 1 ):102- 108.
[8] Van Den Hcuvel J C,Van Putten F J M.Laser jamming in the 3 to 5μm wavelength band[R].FEL-97-A382,1997,AD-A346689.
罗福, 江继军, 孙承纬. 硅光电二极管激光损伤阈值随激光脉宽的变化[J]. 强激光与粒子束, 2004, 16(6): 685. LUO Fu, JIANG Ji-jun, SUN Cheng-wei. Variation in damage thresholds of Si photodiodes with laser pulse duration[J]. High Power Laser and Particle Beams, 2004, 16(6): 685.
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