2微米波段低发散角瓦级GaSb基宽区量子阱激光器

通过在宽区GaSb基半导体激光器波导中引入鱼骨型微结构, 实现了瓦级激光输出并且改善了侧向发散角.本文通过分析微结构的刻蚀深度对激光功率和远场特性的影响, 研究并发现了微结构的引入可以明显的提高激光器输出功率, 同时深刻蚀的微结构对降低模式数和侧向发散角有着更明显的改善作用.相比于未引入微结构的激光器, 引入深刻蚀微结构的宽区激光器侧向95%功率定义的远场发散角降低了大约57%, 并且实现了超过1.1 W的最大连续输出功率.

Abstract

GaSb based broad-area (BA) diode lasers with watt-class emission power and improved divergence were demonstrated using a fishbone shape microstructure. The influences of etching depth of microstructure on the emission and far-field performance were investigated. It was found that the utilization of microstructure was able to enhance the emission power evidently. Moreover, the deeply etched microstructure was more effective on the decrease of mode number and lateral far-field divergence. Compared with the device without microstructure, the deeply etched BA lasers show 57% decrease in the lateral far-field angle defined by the 95% power content, and the maximum continuous-wave (CW) output power exceeds 1.1 W.

参考文献

[1] Gaimard Q, Triki M, Nguyen-Ba T, et al. Distributed feedback GaSb based laser diodes with buried grating: a new field of single frequency sources from 2 to 3 μm for gas sensing applications [J]. Opt. Express, 2015, 23: 19118-19128.

[2] Geerlings E, Rattunde M, Schmitz J, et al. Widely tunable GaSb-based external cavity diode laser emitting around 2.3μm [J]. IEEE Photon. Technol. Lett., 2006, 18: 1913-1915.

[3] Karsten S, Samir L, Philpp K, et al. 2μm laser sources and their possible applications [C/OL]. Frontiers in Guided Wave Optics and Optoelectronics (Germany: LISA laser products OHG ). 2010(2010-02-1). http://www.intechopen.com.

[4] Belenky G, Shterengas L, Kim J G, et al. GaSb-based lasers for spectral region 2-4μm: challenges and limitations [J]. Proc. SPIE, 2005, 5732:169-174.

[5] Rouillard Y, Genty F, Perona A, et al. Edge and vertical surface emitting lasers around 2.0～2.5μm and their applications[J]. Philos. Trans. A, 2001, 359: 581-597.

[6] Compeán-Jasso V H, Anda-Salazar F, de Sánchez-Nio F, et al. High and abrupt breakdown voltage In0.15Ga0.85As0.14Sb0.86/GaSb junctions grown by LPE[J]. Infrared Phys. Technol., 2016, 79:32-35.

[7] Muller M, Rattunde M, Kaufel G. et al. Short-pulse high-power operation of GaSb-based diode lasers[J]. IEEE Photon. Technol. Lett., 2009, 21: 1770-1772.

[8] Gassenq A. Taliercio, T. Cerutti L, et al. Mid-IR lasing from highly tensile-strained, type II, GaInAs/GaSb quantum wells[J]. Electron. Lett., 2009, 45:1320-1321.

[9] Rattunde M, Schmitz J, Kaufel G, et al. GaSb-based 2.X μm quantum-well diode lasers with low beam divergence and high output power[J]. Appl. Phys. Lett., 2006, 88: 08115.

[10] Wolff S, Rodionov A, Sherstobitov V E, et al. Fourier-optical transverse mode selection in external-cavity broad-area lasers: experimental and numerical results [J]. IEEE Journal of Quantum Electronics, 2003, 39(3): 448-458.

[11] Lichtner M, Tronciu V Z, Vladimirov A G, Theoretical investigation of striped and non-striped broad area lasers with off-axis feedback[J]. IEEE J. Quantum Electron., 2012, 48: 353-360.

[12] Swint R B, Yeoh T S, Elarde V C, et al. Curved waveguides for spatial mode filters in semiconductor lasers [J]. Photon. Technol. Lett., 2004, 16: 12-14.

[13] Wenzel H, Crump P, Fricke J, et al. Suppression of higher-order lateral modes in broad-area diode lasers by resonant anti-guiding [J]. IEEE J. Quantum Electron, 2013, 49:1102-1108.

[14] Wenzel H, Bugge E, Dallmer M, et al. Fundamental-lateral mode stabilized high-power ridge-waveguide lasers with a low beam divergence[J]. IEEE Photon. Technol. Lett., 2008, 20: 214-216.

[15] Choi H K, Walpole J N, Turner G W, et al. GaInAsSb-AlGaAsSb tapered lasers emitting at 2.05 μm with 0.6 W diffraction-limited power[J]. IEEE Photon. Technol. Lett., 1998, 10(7): 938-940.

[16] Forouhar S, Briggs R M, Frez C, et al. High-power laterally coupled distributed-feedback GaSb-based diode lasers at 2μm wavelength [J]. Appl. Phys. Lett., 2012, 100: 031107.

[17] Rong J, Xing E, Zhang Y, et al. Low lateral divergence 2 μm InGaSb/ AlGaAsSb broad-area quantum well lasers [J]. Optics Express, 2016, 24(7):7246.

[18] Kelemen M T, Weber J, Mikulla M, et al. High-power high-brightness tapered diode lasers and amplifiers [J].Proc. SPIE, 2005, 5723:198-208.

[19] Hecht J. Bringing high brightness to high-power laser diodes [J]. Laser Focus World, 2011, 47(11): 43-46.

[20] Crump P, Leisher P, Matson T, et al. Control of optical mode distribution through etched microstructures for improved broad area laser performance [J]. Appl. Phys. Lett., 2008, 92: 131113.

[21] Jonathan A F, Mikhail A B. Federico C. Wide-ridge metal-metal terahertz quantum cascade lasers with high-order lateral mode suppression [J]. Appl. Phys. Lett., 2008, 92: 031106.

[22] Wang L, Tong C. Tian S, et al. High-Power Ultralow Divergence Edge-Emitting Diode Laser With Circular Beam[J]. IEEE J. Sel. Top. Quantum Electron. 2015, 21(6):1501609.

[23] Crump P, Pietrzak A, Bugge F, et al. 975 nm high power diode lasers with high efficiency and narrow vertical far field enabled by low index quantum barriers[J]. Appl. Phys. Lett., 2010, 96(13): 131110.

邢恩博, 戎佳敏, 张宇, 佟存柱, 田思聪, 汪丽杰, 舒适立, 卢泽丰, 牛智川, 王立军. 2微米波段低发散角瓦级GaSb基宽区量子阱激光器[J]. 红外与毫米波学报, 2017, 36(3): 280. XING En-Bo, RONG Jia-Min, ZHANG Yu, TONG Cun-Zhu, TIAN Si-Cong, WANG Li-Jie, SHU Shi-Li, LU Ze-Feng, NIU Zhi-Chuan, WANG Li-Jun. Watt-class low divergence 2 μm GaSb based broad-area quantum well lasers[J]. Journal of Infrared and Millimeter Waves, 2017, 36(3): 280.

2微米波段低发散角瓦级GaSb基宽区量子阱激光器

关于本站 Cookie 的使用提示

全站搜索

2微米波段低发散角瓦级GaSb基宽区量子阱激光器

相关论文

相关资讯

关于本站 Cookie 的使用提示

全站搜索