提出了通过隧道带间级联实现半导体激光器有多个激射波长的新型物理思想，并以GaAs为隧道结，InGaAs应变量子阱为有源区，利用金属有机物化学气相沉积(MOCVD)生长了含有两个有源区的双波长半导体激光器。制备了90 μm条宽的脊型波导器件结构，测试得到了能同时激射951 nm和986 nm两个波长的双波长半导体激光器，腔面未镀膜时的斜率效率达到了1.12 W/A，垂直远场为基模，水平方向发散角为10°，垂直方向发散角为36°。

novel semiconductor laser is proposed which could have multiwavelength cascaded by tunnel junction, and a dual-wavelength semiconductor which has two active regions is grown by MOCVD with GaAs as tunnel junction and InGaAs strain quantum well as the active regions. A ridge structure of 90 μm stripe width is fabricated. The measurement results show that the laser can have two lasing wavelengths, 951nm and 986nm, the slop efficiency reaches 1 12 W/A without coating, and the far-field FWHM are 10° and 36° for horizontal and vertical direction, respectively