在ZnO/Si衬底上ZnCdSe/ZnSe多量子阱的生长与光学特性
王晓华, 范希武, 单崇新, 张振中, 刘益春. 在ZnO/Si衬底上ZnCdSe/ZnSe多量子阱的生长与光学特性[J]. 中国激光, 2004, 31(3): 297.
王晓华, 范希武, 单崇新, 张振中, 刘益春. Growth and Optical Characteristic of ZnCdSe/ZnSe Multi-quantum Wells on ZnO/Si Substrates[J]. Chinese Journal of Lasers, 2004, 31(3): 297.
[1] . Bourret, A. Barski, J. L. Rouviere et al.. Growth of aluminum nitride on (111) silicon: Microstructure and interface structure[J]. J. Appl. Phys., 1998, 83(4): 2003-2009.
[2] . P. Kobayashi, J. T. Kobayashi, P. D. Dapkus et al.. GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer[J]. Appl. Phys. Lett., 1997, 71(24): 3569-3571.
[3] M. Yokoyama, N. T. Chen, H. Y. Ueng. Growth and characterization of ZnSe on Si by atomic layer epitaxy [J]. J. Crystal Growth, 2000, 212(1/2):97~102
[4] . Wang, Y. Hiroyama, M. Tamura et al.. Initial growth of cubic GaN on Si(001) coated with a thin flat SiC buffer layer[J]. J. Crystal Growth, 2000, 220(3): 204-208.
[5] . K. Lee, R. H. Horng, D. S. Wuu et al.. Improvements in the heteroepitaxy of GaAs on Si by incorporating a ZnSe buffer layer[J]. Appl. Phys. Lett., 1991, 59(2): 207-209.
[6] S. Seto, S. Yamada, K. Suzuki. Growth of CdTe on hydrogen-terminated Si(111) [J]. J. Crystal Growth, 2000, 214/215:5~8
[7] . T. Romano, R. D. Bringans, X. Zhou et al.. Interface structure of ZnS/Si (001) and comparison with ZnSe/Si(001) and GaAs/Si(001)[J]. Phys. Rev. B, 1995, 52(15): 11201-11205.
[8] . D. Bringans, D. K. Biegelsen, L.-E. Swartz et al.. Effect of interface chemistry on the growth of ZnSe on the Si(100) surface[J]. Phys. Rev. B, 1992, 45(23): 13400-13406.
[9] Xiaochuan Zhou, Shan Jiang, Wiley P. Kirk. Molecular beam epitaxy of BeTe on vicinal Si(100) surfaces [J]. J. Crystal Growth, 1997, 175/176(Part.1):624~631
[10] V. H. Méndez-García, A. Pérez Centeno, M. López-López et al.. Improvement in the crystal quality of ZnSe films on Si(111) substrates with a nitrogen surface treatment [J]. Thin Solid Films, 2000, 373(1/2):33~36
[11] . Kern, D. A. Puotinen. Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology[J]. RCA Rev., 1970, 31: 187-196.
[12] Yu Guanghui. Optoelectronic properties of ZnCdSe/ZnSe multi-superlattices structure [D]. The PH.D Thesis of Chinese Academy of Sciences, 1999. 33
于广辉. ZnCdSe/ZnSe组合超晶格结构的光电性质研究[D]. 中国科学院博士学位论文, 1999. 33
[13] . Vanheusden, C. H. Seager, W. L. Warren et al.. Correlation between photoluminescence and oxygen vacancies in ZnO phosphors[J]. Appl. Phys. Lett., 1996, 68(3): 403-405.
[14] S. Yamauchi, T. Hariu, H. Ohba et al.. Total low temperature plasma process for epitaxial growth of compound semiconductors on Si:InSb/Si [J]. Thin Solid Films, 1998, 316(1-2):93~99
[15] . K. Vodop'yanov, N. N. Mel'nik, Yu. G. Sadof'ev. Raman scattering spectroscopy of Zn1-xCdxSe films grown on GaAs substrates by molecular-beam epitaxy[J]. Semiconductors, 1999, 33(3): 286-288.
[16] S. Nakashima, A. Fujii, K. Mizoguchi et al.. Raman scattering measurements of strains in ZnSe epitaxial films [J]. Jpn. J. Appl. Phys., 1988, 27(Part.1, 7):1327~1330
[17] . . Raman spectral study of silicon nanomires: High-order scattering and phonon confinement effects[J]. Phys. Rev. B, 2000, 61(24): 16827-16832.
[18] . Hill. Energy-gap variations in semiconductor alloys[J]. J. Phys. C: Solid State Phys., 1974, 7(3): 521-526.
[19] . J. Lozykowski, V. K. Shastri. Excitonic and Raman properties of ZnSe/Zn1-xCdxSe strained-layer quantum wells[J]. J. Appl. Phys., 1991, 69(5): 3235-3242.
王晓华, 范希武, 单崇新, 张振中, 刘益春. 在ZnO/Si衬底上ZnCdSe/ZnSe多量子阱的生长与光学特性[J]. 中国激光, 2004, 31(3): 297. 王晓华, 范希武, 单崇新, 张振中, 刘益春. Growth and Optical Characteristic of ZnCdSe/ZnSe Multi-quantum Wells on ZnO/Si Substrates[J]. Chinese Journal of Lasers, 2004, 31(3): 297.