γ-辐照对纯Y2SiO5和Eu3+∶Y2SiO5晶体光谱性能的影响

庞辉勇; 赵广军; 介明印; 朱江; 何晓明; 徐军

光学学报, 2005, 25 (12): 1655, 网络出版: 2006-05-23

γ-辐照对纯Y₂SiO₅和Eu³⁺∶Y₂SiO₅晶体光谱性能的影响

Effect of Gamma Irradiation on the Spectral Properties of Undoped and Eu³⁺-Doped Y₂SiO₅ Single Crystals

论文大纲

庞辉勇 ^1,2,*赵广军 ¹介明印 ^1,2朱江 ^1,2何晓明 ¹徐军 ¹

作者单位

¹ 中国科学院上海光学精密机械研究所,上海 201800

² 中国科学院研究生院,北京 100039

光学材料晶体吸收光谱辐照色心 optical material crystal absorption spectra irradiation color center

摘要

研究了γ-辐照前后纯Y2SiO5和Eu3+掺杂的Y2SiO5晶体吸收光谱的变化,辐照后,未退火和氢气退火的纯Y2SiO5晶体在260～270 nm和320 nm波段产生了附加吸收峰,分别是由F心和O-心的吸收引起的;经过空气退火的纯YSO晶体中,由于消除了氧空位,因此辐照后没有出现色心吸收峰。在Eu3+∶Y2SiO5晶体中,不但有相同的F心和O-心吸收峰,而且还有Eu2+离子在300 nm和390 nm的吸收峰。随着辐照剂量的增加,色心附加吸收峰增强。空气退火能减少Eu3+∶Y2SiO5晶体中的色心,而氢气退火能增加色心。

Abstract

The absorption spectra of undoped and Eu3+-doped Y2SiO5 single crystals before and after gamma irradiation were studied. Additional absorption peaks at 260～270 nm and 320 nm were observed in irradiated Y2SiO5 crystal with no annealing or hydrogen-annealing, which were respectively caused by F centers and O- centers. Owing to the abserence of oxygen vacancy, there was no absorption peaks of color centers in air-annealed Y2SiO5 crystal. Additional absorption band of Eu2+ ions, which peaked at 300 nm and 390 nm, were produced in irradiated and H2-annealed Eu3+∶Y2SiO5 crystal, except absorption bands of F centers and O- centers. Additional absorption increased with irradiation dose increasing. Air-annealing could decrease the concentration of color centers, and the H2-annealing could increase it.

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庞辉勇, 赵广军, 介明印, 朱江, 何晓明, 徐军. γ-辐照对纯Y₂SiO₅和Eu³⁺∶Y₂SiO₅晶体光谱性能的影响[J]. 光学学报, 2005, 25(12): 1655. 庞辉勇, 赵广军, 介明印, 朱江, 何晓明, 徐军. Effect of Gamma Irradiation on the Spectral Properties of Undoped and Eu³⁺-Doped Y₂SiO₅ Single Crystals[J]. Acta Optica Sinica, 2005, 25(12): 1655.

γ-辐照对纯Y₂SiO₅和Eu³⁺∶Y₂SiO₅晶体光谱性能的影响

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