中国激光, 2002, 29 (4): 363, 网络出版: 2006-08-08
激光干涉结晶法制备三维有序分布的nc-Si阵列
Fabrication of the Three-dimensional Ordered nc-Si Array Made by Pulsed Laser Interference Crystallization
摘要
利用准分子激光干涉结晶法使a-Si:H/a-SiNx:H多层膜中的超薄a-Si:H层定域晶化,成功地制备出三维有序分布的nc-Si阵列.原子力显微镜(AFM)、微区拉曼(micro-Raman)光谱及剖面透射电子显微镜(X-TEM)的分析结果揭示在晶化薄膜中已形成平均尺寸约为3.6 nm,横向周期2 μm,纵向周期与a-Si:H/a-SiNx:H多层膜周期(14 nm)相等的nc-Si阵列.
Abstract
A new method of phase-modulated excimer laser crystallization to fabricate the three-dimensional nc-Si array within the a-Si∶H/a-SiN x∶H multilayers (MLs) is adopted. The results of atomic force microscopy (AFM), micro-Raman measurements and cross-section transmission electron microscopy (X-TEM) demonstrated that the crystallized sample shows a three-dimensional ordered structure of nc-Si with the average size of about 3.6 nm, which has longitudinal order with 14 nm periodicity confined by SiN x sublayers in the MLs, and lateral order with 2 μm periodicity by patterned local crystallization.
王晓伟, 王立, 马忠元, 鲍云, 徐骏, 黄信凡, 陈坤基. 激光干涉结晶法制备三维有序分布的nc-Si阵列[J]. 中国激光, 2002, 29(4): 363. 王晓伟, 王立, 马忠元, 鲍云, 徐骏, 黄信凡, 陈坤基. Fabrication of the Three-dimensional Ordered nc-Si Array Made by Pulsed Laser Interference Crystallization[J]. Chinese Journal of Lasers, 2002, 29(4): 363.
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