测量了Si(100)(2×1)-Ｈ表面和Si(100)(3×1)-H表面的反射二次谐波强度随温度的变化关系，并与清洁的Si(100)(2×1)表面进行了比较。Si(100)(2×1)表面和Si(100)(3×1)-H表面的二次谐波强度随温度的上升而单调地减小，Si(100)(2×1)-H表面二次谐波强度随温度的变化不是单调的，约在470 K时信号最大。可以根据二次谐波信号的强度及其随温度的变化关系来确定样品温度和表面结构。

In this paper, we report out experimental results of optical second harmonic generation from clean Si(100)2×1),Si(100)(2×1)-H and Si(100)(3×1)-H surfaces.For the clean Si(100)-(2×1)surface and the Si( 100)(3×1)-H surface,the second harmonic Intensity decreased monotonlcall with increasing temperature.For the(2 ×1) monohydride Si(100)surface,the second harmonic intensity varied on the temperature not monotonkically,but has the maximum at about 470 K.Structure and sample temperature could be monitored by the second harmonic intensity and the tempeerature dependence of second harmonic intensity.