本文根据交流液晶光阀对CdS光导模的要求,采用真空热蒸发淀积以及淀积后的高温退火,掺铜敏化方法,制备了高暗电阻率、高光敏性,膜厚大于10μm的表面光洁、性能稳定的CdS光导膜.经测定,其直流暗电阻率大于10~9Ω-cm,交流亮,暗电流比在10~2数量级,交流光响应时间小于100ms.已基本上符合与液晶层的匹配要求.

A method of preparing CdS photoconductive film used in AC Liquid Crystal Light Valve (LCLV)is developed. It employs general evaporating techniques in the vacuum system. After evaprating, the, CdS film is annealed at high temperature and diffused with proper Cu impurity as acceptor. Thus a CdS film with smooth surface, high dark resistance and well photocondactivity is obtained. It has been known by the measurement that the dark resistance is higher then 109Ω.cm. The ratio of light to dark electrical current is of the order of 10s, the response time ia shorter than 100 ms.