强激光与粒子束, 2008, 20 (4): 657, 网络出版: 2008-08-17   

衬底对原位氧化制备的ZnO薄膜结构和光学性质的影响

Effects of substrate on ZnO thin films prepared by in situ oxidation of Zn3N2
作者单位
1 湛江师范学院,物理科学与技术学院,湛江,524048
2 兰州大学,物理科学与技术学院,兰州,730000
引用该论文

张军, 谢二庆, 谢毅柱, 付玉军, 邵乐喜. 衬底对原位氧化制备的ZnO薄膜结构和光学性质的影响[J]. 强激光与粒子束, 2008, 20(4): 657.

张军, 谢二庆, 谢毅柱, 付玉军, 邵乐喜. Effects of substrate on ZnO thin films prepared by in situ oxidation of Zn3N2[J]. High Power Laser and Particle Beams, 2008, 20(4): 657.

参考文献

[1] Service R F.Materials science:Will UV lasers beat the blues [J].Science,1997,276:895-897.

[2] Tang Z K,Wong G K L,Yu P,et al.Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films[J].Appl Phys Lett,1998,72:3270-3272.

[3] Bagnall D M,Chen Y F,Zhu Z,et al.High temperature excitonic stimulated emission from ZnO epitaxial layers[J].Appl Phys Lett,1998,73:1038-1040.

[4] Rusu G I,Diciu M,Pirghie C,et al.Structural characterization and optical properties of ZnSe thin films[J].Applied Surface Science,2007,253:9500-9505.

[5] Fazzio M,Caldas J,Zunger A.Many-electron multiplet effects in the spectra of 3d impurities in heteropolar semiconductors[J].Phys Rev B,1984,30:3430-3435.

[6] Katz O,Garber V,Meyler B,et al.Anisotropy in detectivity of GaN Schottky ultraviolet detectors:Comparing lateral and vertical geometry[J].Appl Phys Lett,2002,80:347-349.

[7] Park W I,Yi G C,Jang H M.Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO(0≤x≤0.49) thin films[J].Appl Phys Lett,2001,79:2022-2024.

[8] Gai Y Q,Yao B,Wei Z P.Effect on nitrogen acceptor as Mg is alloyed into ZnO[J].Appl Phys Lett,2008,92:062110.

[9] Zhang X Q,Shang H K,Teng X Y,et al.Lasing action of high quality ZnO thin film deposited by radio-frequency magnetron sputtering[J].Chin Phys,2005,14:1205-1208.

[10] Zhang X J,Ma H L,Li Y X,et al.The optical properties of MgxZn1-xO thin films[J].Chin Phys,2006,15:2385-2389.

[11] Zhang S B,Wei S H,Zunger A A.Phenomenological model for systematization and prediction of doping limits in Ⅱ-Ⅳ and Ⅰ-Ⅲ-Ⅵ2 compounds[J].J Appl Phys,1998,83:3192-3197.

[12] Kobayashi A,Sankey O F,Dow J D.Semiempirical tight-binding band structures of wurtzite semiconductors:AlN,CdS,CdSe,ZnS,and ZnO[J].Phys Rev,1983,28:949-954.

[13] Wang C,Ji Z G,Liu K,et al.p-Type ZnO thin films prepared by oxidation of Zn3N2 thin films deposited by DC magnetron sputtering[J].J Crystal Growth,2003,259:279-281.

[14] Li B S,Liu Y C,Zhi Z Z,et al.Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films[J].J Mater Res,2003,18:8-13.

[15] 张军,谢二庆,付玉军,等.原位氧化Zn3N2制备p型ZnO薄膜的性能研究[J].物理学报,2007,56:4914-4917.(Zhang J,Xie E Q,Fu Y J,et al.Study of p-Type ZnO thin films prepared by In Situ oxidation of Zn3N2.Atca Physica Sinica,2007,56:4914-4917)

张军, 谢二庆, 谢毅柱, 付玉军, 邵乐喜. 衬底对原位氧化制备的ZnO薄膜结构和光学性质的影响[J]. 强激光与粒子束, 2008, 20(4): 657. 张军, 谢二庆, 谢毅柱, 付玉军, 邵乐喜. Effects of substrate on ZnO thin films prepared by in situ oxidation of Zn3N2[J]. High Power Laser and Particle Beams, 2008, 20(4): 657.

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