磁控溅射制备纳米晶GZO/CdS双层膜及GZO/CdS/p-Si异质结光伏器件的研究

采用磁控溅射制备Ga掺杂ZnO (GZO)/CdS双层膜在p型晶硅衬底上以形成GZO/CdS/p-Si异质结器件。纳米晶GZO/CdS双层膜的微结构、光学及电学特性, 通过XRD、SEM、XPS、紫外-可见光分光光度计和霍尔效应测试系统表征。GZO/CdS/p-Si异质结J-V曲线显示良好的整流特性。在±3 V时, 整流比IF/IR(IF和IR分别表示正向和反向电流)已达到21。结果表明纳米晶GZO/CdS/p-Si异质结具有好的二极管特性, 在反向偏压下获得高光电流密度。纳米晶GZO/CdS/p-Si异质结显示明显的光伏特性。由于CdS晶格常数在GZO和晶Si之间, 它能作为一个介于GZO和晶Si之间的缓冲层, 能有效地减少GZO和p-Si之间的界面态。因此, 我们获得了GZO/CdS/p-Si异质结明显光伏特性。

Abstract

In this work, Ga doped ZnO (GZO)/CdS bilayer films were prepared on p-Si substrate by magnetron sputtering to form GZO/CdS/p-Si heterojunction device. The structural, optical and electrical properies of the nanocrystalline GZO/CdS bilayer films were studied by XRD, SEM, XPS, UV-VIS spectrophotometer and Hall effect measurement. The J-V curve of GZO/CdS/p-Si heterojunction device shows good rectifying behavior. And the value of IF/IR (IF and IR stand for forward and reverse current, respectively) at ±3 V is found to be as high as 21. The results indicate that the nanocrystalline GZO/CdS/p-Si heterojunction possesses good diode characteristic. High photocurrent density is obtained under a reverse bias. The nanocrystalline GZO/CdS/p-Si heterojunction device exhibits clear photovoltaic effect. Because the lattice constant of CdS is between GZO and Si, it can be used for a buffer layer between GZO and Si, to effectively reduce the interface states between GZO and p-Si. Therefore, we observed the clear photovoltaic effect of GZO/CdS/p-Si heterojunction.

参考文献

[1] Du H W, Yang J, Li Y H, et al. Preparation of ITO/SiOx/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering［J］. Applied Physics Letters.2015,106: 093508.

[2] Shen L, Ma Z Q, Shen C, et al. Studies on fabrication and characterization of a ZnO/p-Si-based solar cell［J］. Superlattices and Microstructures,2010, 48: 426-433.

[3] Poonam Shokeen, Amit Jain, Avinashi Kapoor, Plasmonic ZnO/p-silicon heterojunction solar cell ［J］. Optical Materials, 2017,67: 32-37.

[4] Bo He, Jing Xu, Huai Zhong Xing, et al. The effect of substrate temperature on high quality c-axis oriented AZO thin films prepared by DC reactive magnetron sputtering for photoelectric device applications ［J］. Superlattices and Microstructures, 2013,64: 319-330.

[5] Wang Lia, YingyiLi, GuopingDu. Enhanced electrical and optical properties of boron-doped ZnO films grown by low pressure chemical vapor deposition for amorphous silicon solar cells ［J］. Ceramics International, 2016, 42:1361-1365.

[6] Wen B, Liu C Q, Wang N. Properties of transparent conductive boron-doped ZnO thin films deposited by pulsed DC magnetron sputtering from Zn1-xBxO targets ［J］.Applied Physics A, 2017,123:211.

[7] Anil Singh, Sujeet Chaudhary, D.K. Pandya, High conductivity indium doped ZnO films by metal target reactive co-sputtering ［J］.Acta Materialia,2016 111: 1-9.

[8] Hyun-Woo Parka, Kwun-BumChunga,Jin-SeongParkb. Electronic structure of conducting Al-doped ZnO films as a function of Al doping concentration ［J］.Ceramics International,2015, 41:1641-1645.

[9] ShuqunChen, MichaelE.A.Warwick, Effects of film thickness and thermal treatment on thestructural and opto-electronicpr Operties of Ga-dopedZnO films deposited by sol-gel method ［J］. Solar Energy Materials & Solar Cells,2015, 137:202-209.

[10] Donguk Kim, Young Park, Minha Kim, Optical and structural properties of sputtered CdS films for thin film solar cell applications ［J］. Materials Research Bulletin, 2015,69:78-83.

[11] Bo Liu, Run Luo, Bing Li. Effects of deposition temperature and CdCl2 annealing on the CdS thin films prepared by pulsed laser deposition ［J］. Journal of Alloys and Compounds, 2016, 654:333-339.

[12] Sivaraman T, Narasimman V, Nagarethinam V S. Effect of chlorine doping on the structural, morphological, optical and electrical properties of spray deposited CdS thin films ［J］.Progress in Natural Science: Materials International, 2015,25:392-398.

[13] Abdolahzadeh Ziabari A, Ghodsi F E. Influence of Cu doping and post-heat treatment on the microstructure, optical properties and photoluminescence features of sol–gel derived nanostructured CdS thin films ［J］.Journal of Luminescence, 2013, 141:121-129.

[14] LI L, SHAN C X, LI B H. Light-Harvesting in n-ZnO/p-Silicon Heterojunctions ［J］. Journal of ELECTRONIC MATERIALS, 2010,39:2467-2470.

[15] Daza1 L G, Martin-Tovar1 E A, Castro-Rodriguez R. Aluminum-Doped Zinc Oxide Thin Films Deposited on Flexible Cellulose Triacetate Substrates Prepared by RF Sputtering ［J］. J Inorg Organomet Polym, 2017, 27:1563-1571.

[16] Bo He, Jing Xu, HuanPo Ning et al, Optoelectronic properties of SnO2/p-Si heterojunction prepared by a simple chemical bath deposition method ［J］.J.infrared millim. Waves, 2017,36(2):139-143.

何波, 徐静, 宁欢颇, 邢怀中, 王春瑞, 张晓东, 莫观孔, 沈晓明. 磁控溅射制备纳米晶GZO/CdS双层膜及GZO/CdS/p-Si异质结光伏器件的研究[J]. 红外与毫米波学报, 2019, 38(1): 44. HE Bo, XU Jing, NING Huan-Po, XING Huai-Zhong, WANG Chun-Rui, ZHANG Xiao-Dong, MO Guan-Kong, SHEN Xiao-Ming. Preparation of nanocrystalline GZO/CdS bilayer films using magnetron sputtering and GZO/CdS/p-Si heterojunction photovoltaic device[J]. Journal of Infrared and Millimeter Waves, 2019, 38(1): 44.

磁控溅射制备纳米晶GZO/CdS双层膜及GZO/CdS/p-Si异质结光伏器件的研究

关于本站 Cookie 的使用提示

全站搜索

磁控溅射制备纳米晶GZO/CdS双层膜及GZO/CdS/p-Si异质结光伏器件的研究

相关论文

相关资讯

关于本站 Cookie 的使用提示

全站搜索