提出了一种简便可行的SOI(Silicon on Insulator)无间距定向耦合光开关(BOA型——Bifurcation Optique Active)模型分析方法.采用等离子体色故效应分析了这种光开关的电学调制机理；而用pn结大注入效应分析开关的电学性质；并根据大截面单模SOI脊形波导理论和上述分析,设计了利用双模干涉机制工作的这种器件的结构参数和电学参数.

A simple and practical modeling of the SOI (Silicon-on-Insulate) zero-gap directional coupler switch (BOA type-Bifurcation Optique Active) is proposed. The electrooptic modulating mechanism of the zero-gap directional coupler switch is investigated by using the plasma dispersion effect. The electricity character of the switch is analysed with the pn junction large injection effect. On the basis of the analyses and the theory of the single- mode optical waveguides with large cross-section, structure parameters and electricity parameters of the switch with double-mode interference mechanism are designed.