二相驱动帧转移型CCD电荷溢出现象分析及解决方法

刘懿; 周青; 尹达一

doi:doi:10.3788/lop51.080401

激光与光电子学进展, 2014, 51 (8): 080401, 网络出版: 2014-07-30

二相驱动帧转移型CCD电荷溢出现象分析及解决方法下载： 564次

Analysis and Solution of Two-Phase FT-CCD Charge Overflow Phenomenon

论文大纲

刘懿 ^1,2,*周青 ^1,2尹达一 ¹

作者单位

¹ 中国科学院上海技术物理研究所, 上海 200083

² 中国科学院大学, 北京 100049

光电子学电荷溢出成像控制积分球实验 optoelectronics CCD CCD charge overflow imaging control integrating sphere tests

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摘要

CCD接收到过强信号时会出现电荷溢出现象，对于无溢出漏级结构的CCD，需合理设置成像系统参数避免出现电荷溢出。针对滨松帧转移型CCD 对非强目标成像时出现的电荷溢出现象，分析其原因是由行读出过程中成像区长时间电荷积累而导致的，通过积分之前的多次帧转移，有效解决了电荷溢出问题，并基于积分球实验进一步论证了原因及解决方法。

Abstract

Charge overflow phenomenon will arise when CCD is receiving strong signals. With CCD without overflow drains, the parameters of the imaging system have to be set properly to avoid charge overflow. Based on the charge overflow phenomenon when using HAMAMATSU Frame-Transfer CCD to image not so strong targets, according to the paper, it is caused by the long-time charge accumulation of the image section during line readout process. To remove the overflow signal effectively, multiple frame transfers are carried out before integration time. Integrating sphere tests are also performed to testify the reason and the solution.

参考文献

[1] W F Kosonocky, J E Carnes, M G Kovac, et al.. Control of blooming in charge-couple imagers[J]. RCA Review, 1974, 35: 3-24.

[2] Yasuo Ishihara, Eiji Oda, Hiroshi Tanigawa, et al.. Interline CCD image sensor with an antiblooming structure[J]. IEEE Transctions on Electron Devices, 1984, ED-31(1): 83-88.

[3] 钟四成，程顺昌，王晓强. CCD 抗晕结构的设计和制作[J]. 半导体光电, 2011, 32(3): 313-316.

Zhong Sicheng, Cheng Shunchang, Wang Xiaoqiang. Design and process of the CCD with anti-blooming structure[J]. Semiconductor Optoelectronics, 2011, 32(3): 313-316.

[4] Pierre Magnan. Detection of visible photons in CCD and CMOS: a comparative view[J]. Nuclear Instruments and Methods in Physics Research A: Acclerators, Spectrometers, Detectors and Associated Equipment, 2003, 504(1-3): 199-212.

[5] Jaroslav Hynecek. Electron-Hole recombination antiblooming for virtual-phase CCD imager[J]. IEEE Transactions on Electron Devices, 1983, ED-30(8): 941-948.

[6] 武利翻. 电子快门与CCD 图像传感器抗晕的研究[J]. 电子科技, 2010, 23(8): 18-19, 24.

Wu Lifan. Research on and simulation of a CCD image sensor with a vertical anti-blooming structure[J]. Electronic Science and Technology, 2010, 23(8): 18-19, 24.

[7] Thomas W McCrunin, Larry C Schooley, Gary R Sims. Signal processing for low-light-level, high-precision CCD imaging[C]. SPIE, 1991, 1448: 225-236.

刘懿, 周青, 尹达一. 二相驱动帧转移型CCD电荷溢出现象分析及解决方法[J]. 激光与光电子学进展, 2014, 51(8): 080401. Liu Yi, Zhou Qing, Yin Dayi. Analysis and Solution of Two-Phase FT-CCD Charge Overflow Phenomenon[J]. Laser & Optoelectronics Progress, 2014, 51(8): 080401.

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