Chinese Optics Letters, 2021, 19 (7): 071301, Published Online: Jul. 22, 2021
Passive devices at 2 µm wavelength on 200 mm CMOS-compatible silicon photonics platform [Invited] Download: 615次
Abstract
As a promising spectral window for optical communication and sensing, it is of great significance to realize on-chip devices at the 2 µm waveband. The development of the 2 µm silicon photonic platform mainly depends on the performance of passive devices. In this work, the passive devices were fabricated in the silicon photonic multi-project wafer process. The designed micro-ring resonator with a 0.6 µm wide silicon ridge waveguide based on a 220 nm silicon-on-insulator platform achieves a high intrinsic quality factor of . The propagation loss is calculated as 1.62 dB/cm. In addition, the waveguide crossing, multimode interferometer, and Mach–Zehnder interferometer were demonstrated at 2 µm with good performances.
Hui Ma, Haotian Yang, Bo Tang, Maoliang Wei, Junying Li, Jianghong Wu, Peng Zhang, Chunlei Sun, Lan Li, Hongtao Lin. Passive devices at 2 µm wavelength on 200 mm CMOS-compatible silicon photonics platform [Invited][J]. Chinese Optics Letters, 2021, 19(7): 071301.