Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells

Jun Chen; Guanghan Fan; Wei Pang; Shuwen Zheng; Yunyan Zhang

doi:doi:10.3788/col201210.062302

Chinese Optics Letters, 2012, 10 (6): 062302, Published Online: Mar. 28, 2012

Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells Download： 661次

论文大纲

Jun Chen Guanghan Fan Wei Pang Shuwen Zheng Yunyan Zhang

Author Affiliations

230.3670 Light-emitting diodes 260.5430 Polarization 300.6170 Spectra

Abstract

Designs of p-doped in quantum well (QW) barriers and specific number of vertically stacked QWs are proposed to improve the optical performance of GaN-based dual-wavelength light-emitting diodes (LEDs). Emission spectra, carrier concentration, electron current density, and internal quantum e±ciency (IQE) are studied numerically. Simulation results show that the e±ciency droop and the spectrum intensity at the large current injection are improved markedly by using the proposed design. Compared with the conventional LEDs, the uniform spectrum intensity of dual-wavelength luminescence is realized when a specific number of vertically stacked QWs is adopted. Suppression of electron leakage current and the promotion of hole injection e±ciency could be one of the main reasons for these improvements.

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Jun Chen, Guanghan Fan, Wei Pang, Shuwen Zheng, Yunyan Zhang. Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells[J]. Chinese Optics Letters, 2012, 10(6): 062302.

Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells Download： 661次

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