采用ACRT-B法生长了四元稀磁半导体化合物Mn0.1Cd0.9In2Te4晶体.采用扫描电镜、X射线衍射仪、ISIS能谱仪、Leica定量金相分析仪以及傅里叶变换红外光谱仪研究了晶体中相的结构、形貌、成分及晶片的红外透射光谱.发现晶体生长初始端由于溶质再分配而引起成分偏离配料比,结果出现三种相:α相、β相和β1相,其中α相和β相是在晶体生长过程中形成的,随温度降低,从α相中又析出β1相.当晶体生长到稳定段,完全形成β相.Mn0.1Cd0.9In2Te4晶体从生长初始端到接近稳态区,β1相由规则排列的?聪虿还嬖蚺帕械慕圃财捶⒄?禁带宽度为1.2eV的Mn0.1Cd0.9In2 Te4在10000～4000cm-1的近红外波数范围内,其透过率最高达83%,在4000～500cm-1的中红外波数范围内透过率为59%～65%.

A diluted magnetic semiconductor MnxCd_1-xIn₂Te₄( x =0.1) ingot is grown by ACRT-B method. Using scanning electron microscopy, X-ray powder diffractometer, ISIS energy-dispersive spectroscopy, Leica quantitative optical microscope and Fourier infrared spectrometer, the microstructure, morphology compositional distribution and transmittance properties of the ingot are analyzed. It is found that α, β and β_1 phases are at the tip of the Mn_0.1 Cd_0.9 In₂Te₄ ingot. Among them, α and β phases are formed during the growing process while β_1 is precipitated from α phase when temperature is below solidus. After the ingot is grown for 36mm, only β phase is formed. The morphology of β_1 phase varies from regular plates to irregular near-round blocks along the axis of the ingot from the beginning. The band gap of Mn_0.1 Cd_0.9 In₂Te₄ ingot is 1.2eV. Maximum of its near infrared transmittance in the range of 10000～2500cm -1 is up to 83% and its middle infrared transmittance in the range of 4000~500cm_1 is from 59% to 65%.