Opto-Electronic Advances, 2020, 3 (4): 04190025, Published Online: Jun. 1, 2020  

Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates

Author Affiliations
1 Department of Electrical and Computer Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States
2 Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
3 HexaTech, Inc., 991 Aviation Parkway, Suite 800, Morrisville, North Carolina 27560, United States
4 Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824, United States
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Akhil Raj Kumar Kalapala, Dong Liu, Sang June Cho, Jeongpil Park, Deyin Zhao, John D. Albrecht, Baxter Moody, Zhenqiang Ma, Weidong Zhou. Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates[J]. Opto-Electronic Advances, 2020, 3(4): 04190025.

References

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[3] H Yoshida, Y Yamashita, M Kuwabara, H Kan. A 342-nm ultraviolet alGaN multiple-quantum-well laser diode. Nat Photonics, 2008, 2: 551.

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[5] V Adivarahan, W H Sun, A Chitnis, M Shatalov, S Wu, et al.. 250 nm AlGaN light-emitting diodes. Appl Phys Lett, 2004, 85: 2175-2177.

[6] T Takano, Y Narita, A Horiuchi, H Kawanishi. Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser. Appl Phys Lett, 2004, 84: 3567-3569.

[7] T Wunderer, C L Chua, Z H Yang, J E Northrup, N M Johnson, et al.. Pseudomorphically grown ultraviolet C photopumped lasers on bulk AlN substrates. Appl Phys Express, 2011, 4: 092101.

[8] W Guo, Z Bryan, J Q Xie, R Kirste, S Mita, et al.. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates. J Appl Phys, 2014, 115: 103108.

[9] R Kirste, Q Guo, J H Dycus, A Franke, S Mita, et al.. 6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation. Appl Phys Express, 2018, 11: 082101.

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Proceedings of 2015 IEEE Summer Topicals Meeting Series (SUM) 123-124 (IEEE, 2015); http://doi.org/10.1109/PHOSST.2015.7248225. ]]>

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Kalapala A R, Liu D, Cho S J, Park J, Zhao D Y et al. Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates. ProcSPIE10918, 109180I (2019).

[12] J E Northrup, C L Chua, Z Yang, T Wunderer, M Kneissl, et al.. Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells. Appl Phys Lett, 2012, 100: 021101.

Akhil Raj Kumar Kalapala, Dong Liu, Sang June Cho, Jeongpil Park, Deyin Zhao, John D. Albrecht, Baxter Moody, Zhenqiang Ma, Weidong Zhou. Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates[J]. Opto-Electronic Advances, 2020, 3(4): 04190025.

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