Opto-Electronic Advances, 2020, 3 (4): 04190025, Published Online: Jun. 1, 2020
Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
Figures & Tables
Fig. 1. The deep UV laser heterostructure grown on AlN substrate with MQWs directly exposed to the air.
Fig. 3. Simulations of TE and TM mode profile in the heterostructure with 3, 15 and 21-period MQWs.
Fig. 4. Schematic experimental setup to measure the edge emission from the cleaved facets.
Fig. 5. AlGaN QW growth on bulk AlN substrates.
(a ) Photoluminescence spectra for different sets of QW designs with different numbers of QWs and different Al compositions shown in Table 1 ; and (b ) Photoluminescence intensity for different sets of QWs.
Fig. 6. Peak emission intensities at different stripe excitation lengths for different pumping power densities. The onset of super-linearity after 0.5 mm excitation stripe length.
Fig. 7. Optical gain measurement.
(a ) Measured gain spectra at different pump power densities, and (b ) peak net modal gain at different pump power densities.
Fig. 8. Optically pumped laser emission measurement.
(a ) Edge emission spectra measured from the cleaved facet at different pump power levels. (b ) Measured L-L curve and FWHM at different pumping power densities.
Table1. Structure information for different sets of QW designs with different numbers of QWs and different Al compositions.
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Akhil Raj Kumar Kalapala, Dong Liu, Sang June Cho, Jeongpil Park, Deyin Zhao, John D. Albrecht, Baxter Moody, Zhenqiang Ma, Weidong Zhou. Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates[J]. Opto-Electronic Advances, 2020, 3(4): 04190025.
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