电荷耦合器件硅基底辐照光场研究

对电荷耦合器件(CCD)硅基底的光照能量分布进行了建模分析和实验研究。使用原子力显微镜和扫描电子显微镜获取了CCD的关键光学参数, 即微透镜表面函数和二氧化硅增厚层厚度。模拟了垂直入射平面光在硅基底表面的能量分布, 并与飞秒激光辐照损伤CCD的实验图像进行了比对, 二者吻合良好。研究结果表明, 微透镜与二氧化硅增厚层的共同作用使得激光能量几乎完全辐照在感光区, 激光能量呈哑铃形分布。

Abstract

The distribution of light field on silicon substrate of charge coupled device (CCD) is analyzed via mathematical modeling and experimental research. The atomic force microscope and scanning electron microscope are used to get the critical optical parameters, i.e. the micro lens surface function and the thickness of silicon dioxide thickening layer. The energy distribution of vertical incident planar light on the silicon substrate is simulated and it is compared with the experimental images of femtosecond laser illumination induced damages to CCD and they are consistent with each other. The research results shown that the coaction of micro lens and silicon dioxide thickening layer makes the laser energy almost illuminate at the sensing zone and the laser energy shows a dumbbell-shaped distribution.

参考文献

[1] 张检民, 张震, 冯国斌, 等. 行间转移型CCD激光干扰效应阈值估算方法［J］. 光学学报, 2015, 35(3): 0314004.

Zhang Jianmin, Zhang Zhen, Feng Guobin, et al. Estimating method of jamming thresholds for laser irradiated interline tranfer CCD［J］. Acta Optica Sinica, 2015, 35(3): 0314004.

[2] 刘懿, 周青, 尹达一. 二相驱动帧转移型CCD电荷溢出现象分析及解决方法［J］. 激光与光电子学进展, 2014, 51(8): 080401.

Liu Yi, Zhou Qing, Yin Dayi. Analysis andsolution of two-phase FT-CCD charge overflow phenomenon［J］. Laser & Optoelectronics Progress, 2014, 51(8): 080401.

[3] Li Z W, Wang X, Shen Z H, et al. Mechanisms for the millisecond laser-induced functional damage to silicon charge-coupled imaging sensors［J］. Applied Optics, 2015, 54(3): 378-388.

[4] Li M X, Jin G Y, Tan Y, et al. Study on the mechanism of a charge-coupled device detector irradiated by millisecond pulse laser under functional loss［J］. Applied Optics, 2016, 55(6): 1257-1261.

[5] 倪晓武, 陆建, 贺安之. 激光对CCD器件破坏时几种阈值的测量［J］. 激光技术, 1994, 18(3): 153-156.

Ni Xiaowu, Lu Jian, He Anzhi. Measurement of laser damaging thresholds of CCD devices［J］. Laser Technology, 1994, 18(3): 153-156.

[6] 沈洪斌, 沈学举, 周冰, 等. 532 nm脉冲激光辐照CCD实验研究［J］. 强激光与粒子束, 2009, 21(10): 1449-1454.

Shen Hongbin, Shen Xueju, Zhou Bing, et al. Experimental study of 532 nm pulsed laser irradiating CCD［J］. High Power Laser and Particle Beams, 2009, 21(10): 1449-1454.

[7] 邵俊峰, 刘阳, 王挺峰, 等. 皮秒激光对电荷耦合器件多脉冲损伤效应研究［J］. 兵工学报, 2014, 35(9): 1408-1413.

Shao Junfeng, Liu Yang, Wang Tingfeng, et al. Damage effect of charge coupled device with multiple-pulse picosecond laser［J］. Acta Armamentarii, 2014, 35(9): 1408-1413.

[8] Gao L Z, Zhu Z W, Shao Z Z, et al. Electric-induced oxide breakdown of a charge-coupled device under femtosecond laser irradiation［J］. Applied Optics, 2013, 52(31): 7524-7529.

[9] 黄绍艳, 张永生, 唐本奇, 等. 500 fs超短脉冲激光对CCD探测器的破坏效应［J］. 强激光与粒子束, 2005, 17(10): 1445-1448.

Huang Shaoyan, Zhang Yongsheng, Tang Benqi, et al. Damage effect on CCD detector irradiated by 500 fs laser pulse［J］. High Power Laser and Particle Beams, 2005, 17(10): 1445-1448.

[10] 邱冬冬, 张震, 王睿, 等. 脉冲激光对CCD成像器件的破坏机理研究［J］. 光学学报, 2011, 31(2): 0214006.

Qiu Dongdong, Zhang zhen, Wang Rui, et al. Mechanism research of pulsed-laser induced damage to CCD imaging devices［J］. Acta Optica Sinica, 2011, 31(2): 0214006.

[11] 姜楠, 张雏, 牛燕雄, 等. 脉冲激光辐照CCD探测器的硬破坏效应数值模拟研究［J］. 激光与红外, 2008, 38(10): 1004-1007.

Jiang Nan, Zhang Chu, Niu Yanxiong, et al. Numerical simulation of pulsed laser induced damage on CCD arrays［J］. Laser and Infrared, 2008, 38(10): 1004-1007.

[12] Zhao Q Z, Qiu J R, Jiang X W, et al. Direct writing computer-generated holograms on metal film by an infrared femtosecond laser［J］. Optics Express, 2005, 13(6): 2089-2092.

高刘正, 赵民伟, 张威, 李颖. 电荷耦合器件硅基底辐照光场研究[J]. 光学学报, 2016, 36(12): 1214004. Gao Liuzheng, Zhao Minwei, Zhang Wei, Li Ying. Light Field on Silicon Substrate of Charge Coupled Device[J]. Acta Optica Sinica, 2016, 36(12): 1214004.

电荷耦合器件硅基底辐照光场研究

关于本站 Cookie 的使用提示

全站搜索

电荷耦合器件硅基底辐照光场研究

相关论文

相关资讯

关于本站 Cookie 的使用提示

全站搜索