研究了Si1-xGex合金半导体中无声子参与光跃迁的产生机制，对由杂质无规分布引起的无声子参与光跃迁给出了一个物理模型。用此模型计算了光跃迁偶极矩，给出了跃迁偶极矩的上限。提出了未掺杂Si1-xGex合金半导体中无声子参与光跃迁的一种跃迁机制，认为是Ge原子周围波函数畸变的集体行为。

The mechanism of the optical transition without phonons between the conduction band and the valence band in doped SiGe alloy is investigated, and the model of no phonon optical transition originated from the statistical distribution of the impurities is suggested. The dipole matrix elements of the transition are calculated based on this model and the upper limits of the dipole matrix elements are calculated. The mechanism of no phonon optical transition in undoped SiGe alloy is also suggested that it is the collectivity action of the deformation wavefunction around Ge atoms.