Photonics Research, 2019, 7 (9): 09000994, Published Online: Aug. 8, 2019   

Ultrasensitive polarization-dependent terahertz modulation in hybrid perovskites plasmon-induced transparency devices Download: 760次

Author Affiliations
1 College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
2 State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, China
3 National Innovation Institute of Defense Technology, Academy of Military Sciences PLA China, Beijing 100071, China
Figures & Tables

Fig. 1. (a) Schematic of the polarization-dependent metamaterial-perovskite THz device. A periodic array of CRRs and SRRs tailors the PIT resonance at different frequencies determined by incident polarizations. A thin perovskite film is deposited on the quartz substrate acting as a photoactive layer illuminated by optical pump pulses (400 nm). (b) Schematic view of the functional unit cell. The thickness of the quartz substrate is H=2  mm, the height of the Au metamaterial is h=127  nm, and the period is Px=150  μm, Py=110  μm. Geometric parameters of the structure are L1=120  μm, L2=50  μm, L11=26  μm, L12=25  μm, L21=50  μm, L22=18  μm, respectively. Inset presentation shows the crystal structure of T−CH3NH3PbI3 phases. Optical microscopic images of fabricated Au structures (c) before and (d) after covering a 55 nm perovskite thin film, where the scale bar represents 100 μm, and the inset picture shows the thickness of the perovskite film.

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Fig. 2. (a) Simulated and (b) measured amplitude transmissions of the designed polarization-related metamaterial under illuminations of x-polarized (blue) and y-polarized (red) THz electric fields without perovskite coating. Dashed lines represent Fano-resonant frequencies for two polarized THz electric fields.

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Fig. 3. Results of the optical modulation of anisotropic THz wave. Measured transmission spectra of the designed perovskite-based device of the (a) x-polarized and (c) y-polarized incident THz electric field under different pump powers. Corresponding numerically simulated transmission spectra of the (b) x-polarized and (d) y-polarized incident THz electric field under different conductivities of the perovskite thin film. The dashed lines mark the frequencies corresponding to the Fano resonance peaks.

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Fig. 4. Calculated z-component field distributions in the transverse plane of the Au metasurface varying the conductivity of the perovskite film under the x-polarized THz electric field from 0 S/m to 960 S/m. Incident fields are normalized as 1 V/m.

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Fig. 5. Calculated z-component field distributions in the transverse plane of the Au metasurface varying the conductivity of the perovskite film under the y-polarized THz electric field from 0 S/m to 1440 S/m. Incident fields are normalized as 1 V/m.

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Fig. 6. Time-evolution dynamics of the metasurface-perovskite device. (a) Transient transmission spectra of the y-polarized THz electric field at different pump-probe delay values for an average pump fluence of 30  μJ/cm2. (b) Measured transient THz excitation dynamics for perovskite (CH3NH3PbI3) thin film spin-coated on the Fano-resonant metasurface implemented by using OPTP measurements for various pump fluences. Solid curves represent the fittings of recombination processes utilizing rate equations, where the dotted lines are measured by experiment.

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Fig. 7. Normalized linear absorption and PL spectra of the spin-coated perovskite (CH3NH3PbI3) film. The PL and absorption peaks are located at 760 and 740 nm, respectively.

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Fig. 8. Intrinsic THz spectra of SRR and CRR resonators along (a) x and (b) y directions. The near-field coupling effect between CRR and SRR is the origin of PIT resonance.

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Fig. 9. Theoretical calculation results of the Lorentzian mechanical oscillator model along the (a) x-polarized and (b) y-polarized incident THz electric field.

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Fig. 10. Group delay data extracted from experiment results as a function of pump fluence: (a) x-direction and (b) y-direction.

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Fig. 11. Simulated results with a phonon mode at 1.0 THz in the perovskite thin film as a function of optical conductivity of the perovskite thin film.

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Table1. Some Reported Active Modulation of the Optically Controlled THz Modulator

YearActive MaterialMaximum Modulation DepthPump Wavelength and Minimum Working FluenceRef.
2018310 nm Ge29%800 nm, 254  μJ/cm2[20]
2017300 nm GaAs nanodisks35%800 nm, 310  μJ/cm2[61]
2017400 nm, drop coated MoS2 film20%800 nm, 12.7  μJ/cm2[18]
2012500 nm Si49%800 nm, 35  μJ/cm2[50]
2018284 nm VO2 film138 deg (phase shifting)800 nm (cw laser), 3.5  W/cm2[13]
201850 nm high-Tc YBCO42%800 nm, 64  μJ/cm2[62]
This work55 nm MAPbI3 film25%400 nm, 5  μJ/cm2This work

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Junhu Zhou, Yuze Hu, Tian Jiang, Hao Ouyang, Han Li, Yizhen Sui, Hao Hao, Jie You, Xin Zheng, Zhongjie Xu, Xiang’ai Cheng. Ultrasensitive polarization-dependent terahertz modulation in hybrid perovskites plasmon-induced transparency devices[J]. Photonics Research, 2019, 7(9): 09000994.

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