[1] 兰林锋,张鹏,彭俊彪. 氧化物薄膜晶体管研究进展 ［J］. 物理学报, 2016,65(12):128504-1-22.

    LAN L F,ZHANG P,PENG J B. Research progress on oxide-based thin film transisitors ［J］. Acta Phys. Sinica, 2016,65(12):128504-1-22. (in Chinese)

[2] 胡宇峰,李冠明,吴为敬,等. 二次耦合直流输出的金属氧化物TFT行驱动电路 ［J］. 发光学报, 2016,37(10):1223-1229.

    HU Y F,LI G M,WU W J,et al.. Gate driver integrated by MOTFTs using twice-bootstrap DC output module ［J］. Chin. J. Lumin., 2016,37(10):1223-1229. (in Chinese)

[3] 楼均辉,姜姝,吴天一,等. 金属氧化物TFT阈值对LCD显示屏可靠性的影响 ［J］. 发光学报, 2018,39(3):383-387.

    LOU J H,JIANG S,WU T Y,et al.. Effect of threshold-voltage of oxide-TFT on the reliability of LCD display ［J］. Chin. J. Lumin., 2018,39(3):383-387. (in Chinese)

[4] 曹镛,陶洪,邹建华,等. 金属氧化物薄膜晶体管及其在新型显示中的应用 ［J］. 华南理工大学学报(自然科学版), 2012,40(10):1-11.

    CAO Y,TAO H,ZOU J H, et al.. Metal oxide thin film transistors and their application to novel display technology ［J］. J. South China Univ. Technol. (Nat. Sci. Ed.), 2012,40(10):1-11. (in Chinese)

[5] NOMURA K,OHTA H,TAKAGI A,et al.. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors ［J］. Nature, 2004,432(7016):488-492

[6] LIM K M,LEEK E,YOO J S,et al.. A 3.5 in. QVGA poly-Si TFT-LCD with integrated driver including new 6-bit DAC ［J］. Solid-State Electron., 2005,49(7):1107-1111.

[7] LAN L F,ZHAO M J,XIONG N N,et al.. Low-voltage high-stability indium-zinc oxide thin-film transistor gated by anodized neodymium-doped aluminum ［J］. IEEE Electron Dev. Lett., 2012,33(6):827-829.

[8] LIN C L,TU C D,CHUANG M C,et al.. Design of bidirectional and highly stable integrated hydrogenated amorphous silicon gate driver circuits ［J］. J. Dis. Technol., 2011,7(1):10-18.

[9] LIN C L,TU C D,WU C E,et al.. Low-power gate driver circuit for TFT-LCD application ［J］. IEEE Trans. Electron Dev., 2012,59(5):1410-1415.

[10] CHU L W,LIU P T,KER M D. Design of integrated gate driver with threshold voltage drop cancellation in amorphous silicon technology for TFT-LCD application ［J］. J. Dis. Technol., 2011,7(12):657-664.

[11] LIAO C W,HE C D,CHEN T,et al.. Implementation of an a-Si∶H TFT gate driver using a five-transistor integrated approach ［J］. IEEE Trans. Electron Dev., 2012,59(8):2142-2148.

[12] LI G M,XIA X H,ZHANG L R,et al.. Design of high speed gate driver employing IZO TFTs ［J］. Displays, 2015,39:93-99 .

[13] 张立荣,马雪雪,王春阜,等. 基于金属氧化物薄膜晶体管的高速行集成驱动电路 ［J］. 物理学报, 2016,65(2):028501-1-8.

    ZHANG L R,MA X X,WANG C F,et al.. High speed gate driver circuit basd on metal oxide thin film transistors ［J］. Acta Phy. Sinica, 2016,65(2):028501-1-8. (in Chinese)

[14] ZHANG L R,HUANG C Y,LI G M,et al.. A low-power high-stability flexible scan driver integrated by IZO TFTs ［J］. IEEE Trans. Electron Dev., 2016,63(4):1779-1782

[15] HUANG C Y,ZHANG L R,ZHOU L,et al.. A low-power scan driver employing IZO TFTs including an AC-DC type output module ［J］. Displays, 2015,38:93-99.

[16] WU W J,ZHANG L R,XU Z P,et al.. A high-reliability gate driver integrated in flexible AMOLED display by IZO TFTs ［J］. IEEE Trans. Electron Dev., 2017,64(5):1991-1996.

[17] KIM B,RYOO C I,KIM S J,et al.. New depletion-mode IGZO TFT shift register ［J］. IEEE Electron Dev. Lett., 2011,32(2):158-160.

[18] 马群刚,周刘飞,喻玥,等. InGaZnO薄膜晶体管背板的栅极驱动电路静电释放失效研究 ［J］. 物理学报, 2019,68(10):108501-1-7.

    MA Q G,ZHOU L F,YU Y,et al.. Electro-static discharge failure analysis and design optimization of gate-driver on array circuit in InGaZnO thin film transistor backplane ［J］. Acta Phys. Sinica, 2019,68(10):108501-1-7. (in Chinese)

[19] WU W J,SONG X F,ZHANG L R,et al.. A highly stable biside gate driver integrated by IZO TFTs ［J］. IEEE Trans. Electron Dev., 2014,61(9):3335-3338.