激光与光电子学进展, 2017, 54 (5): 052302, 网络出版: 2017-05-03  

AlGaInP发光二极管老化性能研究 下载: 508次

Study on Aging Properties of AlGaInP Light Emitting Diode
作者单位
三安光电科技有限公司, 福建 厦门 361009
引用该论文

郑元宇. AlGaInP发光二极管老化性能研究[J]. 激光与光电子学进展, 2017, 54(5): 052302.

Zheng Yuanyu. Study on Aging Properties of AlGaInP Light Emitting Diode[J]. Laser & Optoelectronics Progress, 2017, 54(5): 052302.

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郑元宇. AlGaInP发光二极管老化性能研究[J]. 激光与光电子学进展, 2017, 54(5): 052302. Zheng Yuanyu. Study on Aging Properties of AlGaInP Light Emitting Diode[J]. Laser & Optoelectronics Progress, 2017, 54(5): 052302.

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