AlGaInP发光二极管老化性能研究 下载: 508次
[1] 陈依新, 沈光地, 孟丽丽, 等. AlGaInP系LED的表面纳米级粗化以及光提取效率提高[J]. 光电子·激光, 2011, 22(10): 1452-1454.
Chen Yixin, Shen Guangdi, Meng Lili, et al. Improved extraction efficiency of AlGaInP light emitting diodes by nano-scale surface roughness[J]. Journal of Optoelectronics·Laser, 2011, 22 (10): 1452-1454.
[2] 宋鹏程, 文尚胜, 尚 俊, 等. 基于PWM的三基色LED的调光调色方法[J]. 光学学报, 2015, 35(2): 0223001.
[3] 宋鹏程, 文尚胜, 陈聪颖. 基于RGBW四色LED的混光研究[J]. 光学学报, 2015, 35(9): 0923004.
[4] Tsao J Y. Solid-state lighting lamps, chips and materials for tomorrow[J]. IEEE Circuits & Devices Magazine, 2004, 20(3): 28-37.
[5] Zhao Aling, Shang Shoujin, Chen Jianxin. Life test and failure mechanism analysis for high-power white LED[J]. China Illuminating Engineering Journal, 2010, 21(1): 48-52.
[6] Meneghesso G, Meneghini M, Zanoni E. Recent results on the degradation of white LEDs for lighting[J]. Journal of Physics D Applied Physics, 2010, 43(35): 354007.
[7] Pursiainen O, Linder N, Jaeger A, et al. Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes[J]. Applied Physics Letters, 2001, 79(18): 2895-2897.
[8] Altieri-Weimar P, Jaeger A, Lutz T, et al. Influence of doping on the reliability of AlGaInP LEDs[J]. Journal of Materials Science, 2008, 19(1): 338-341.
[9] Liu Y J, Yen C H, Yu C H, et al. Characteristics of an AlGaInP-based light emitting diode with an indium-tin-oxide (ITO) direct ohmic contact structure[J]. IEEE Journal of Quantum Electronics, 2010, 46(2): 246-252.
[10] 高 伟. AlGaInP转移衬底和可靠性的研究[D]. 北京: 北京工业大学, 2011.
Gao Wei. Study of substrate transfer and reliability of AlGaInP LED[D]. Beijing: Beijing University of Technology, 2011.
[11] 王海燕, 张雅婷, 金露凡, 等. 放大自发辐射光噪声的加速老化研究[J]. 中国激光, 2015, 42(4): 0405003.
[12] 吴玉香, 尚 俊, 王孝洪, 等. 一种基于脉冲宽度调制和脉冲幅度调制的发光二极管驱动器[J]. 光学学报, 2015, 35(9): 0922003.
[13] Hsu S C, Wuu D S, Zheng X, et al. High-performance AlGaInP/GaAs light-emitting diodes with a carbon-doped GaP/indium-tin oxide contact layer[J]. Japanese Journal of Applied Physics, 2008, 47(9): 7023-7025.
郑元宇. AlGaInP发光二极管老化性能研究[J]. 激光与光电子学进展, 2017, 54(5): 052302. Zheng Yuanyu. Study on Aging Properties of AlGaInP Light Emitting Diode[J]. Laser & Optoelectronics Progress, 2017, 54(5): 052302.