如果在折射率较高的电介质基底上镀一层折射率较低的电介质薄膜(介质膜的另一侧为折射率更低的介质,如空气),并且恰当选择基底内光束的入射角,使得光束在基底-介质膜界面上折射到薄膜内、在薄膜-空气界面上全反射,那么反射光束的Goos-Hanchen(GH)位移在一定条件下会得到共振增强。采用微波技术直接地测量了这种Goos-Hanchen位移随电介质膜厚度的变化,测量结果与理论预言吻合得较好。

The Goos-Hnchen shift (GH shift) of reflected beam is resonance enhanced under some conditions when the incident beam transmits from the high-refractive index prism to the low-refractive index dielectric thin-film and is totally reflected from the film-air interface. In this paper, the GH shift versus the film thickness is directly measured by microwave technology. The experimental measurements confirm the theoretical prediction.