制造工艺低相关的AGC跨阻放大器

蒋湘; 邹雪城; 杜明鲜; 余国义; 付先成

光通信研究, 2006 (2): 65, 网络出版: 2011-03-07

制造工艺低相关的AGC跨阻放大器

Less-process-dependent AGC transimpedance amplifier

论文大纲

蒋湘 ^1,2邹雪城 ¹杜明鲜 ²余国义 ¹付先成 ¹

作者单位

¹ 华中科技大学，湖北武汉430074

² 烽火通信科技股份有限公司，湖北武汉430074

模拟电路跨阻放大器光通信互补金属氧化物半导体 analog circuit transimpedance amplifier optical communication CMOS

摘要

文章提出了一种速率为622 Mbit/s的带自动增益控制(AGC)和自动偏移补偿(AOC)的光通信用跨阻集成放大器电路。本设计采用了中芯国际0.25 μm 1P3M的标准互补金属氧化物半导体(CMOS)工艺。HSPICE仿真结果表明，在各种偏差最大的工艺条件下，跨阻放大器初始增益的浮动区间为-10.2%~9.7%，而AGC的初始偏置电压的浮动区间为-0.384%~0.307%。

Abstract

A 622 Mbit/s TIA integrated circuit with AGC and AOC for optical communications is proposed. SMIC 0.25 μm 1P3M CMOS process is applied in the design. HSPICE simulation shows that in all the worst cases, the floating region of TIA initial gain is between -10.2% and 9.7%, and the floating region of initial AGC bias voltage between -0.384% and 0.307%.

参考文献

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蒋湘, 邹雪城, 杜明鲜, 余国义, 付先成. 制造工艺低相关的AGC跨阻放大器[J]. 光通信研究, 2006, 32(2): 65. JIANG Xiang, ZOU Xue-cheng, DU Ming-xian, YU Guo-yi, FU Xian-cheng. Less-process-dependent AGC transimpedance amplifier[J]. Study On Optical Communications, 2006, 32(2): 65.

制造工艺低相关的AGC跨阻放大器

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