强激光与粒子束, 2011, 23 (8): 2141, 网络出版: 2011-09-20
高压快速离化半导体开关及其脉冲压缩特性
High voltage semiconductor fast ionization device and its properties of pulse compression
高压脉冲 快速离化器件 半导体开关 等离子体 脉冲压缩 high voltage pulse fast ionization devices semiconductor switch plasma pulse compression
摘要
介绍了全固态高压快速离化半导体开关(FID)的工作原理和半导体结构，实验研究了在不同外偏置电压下的输出脉冲幅度特性和脉宽压缩特性，并对实验研究结果进行分析。在50 Ω负载下，将一输入脉冲幅度1.7 kV 、脉宽4 μs、重频2 kHz高压脉冲，通过FID压缩成脉冲幅度1 985 V、脉宽90 ns、重频2 kHz的高压脉冲。
Abstract
The special structure and working principle of all-solid-state fast ionization device(FID) are studied. The compression characteristics in pulse voltage amplitude and pulse width of FID are given through experiment study at different exterior bias voltages. The experimental result of transforming the input pulse of voltage 1.7 kV, width 4 μs, repetition frequency 2 kHz into the output pulse of voltage 1 985 V, width 90 ns, repetition frequency 2 kHz is obtained from FID compression under 50 Ω load.
梁勤金, 石小燕, 潘文武. 高压快速离化半导体开关及其脉冲压缩特性[J]. 强激光与粒子束, 2011, 23(8): 2141. Liang Qinjin, Shi Xiaoyan, Pan Wenwu. High voltage semiconductor fast ionization device and its properties of pulse compression[J]. High Power Laser and Particle Beams, 2011, 23(8): 2141.
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